Mobility improvement and microwave characterization of a graphene field effect transistor with silicon nitride gate dielectrics

IEEE Electron Device Letters

Volumn 32, Issue 7, 2011, Pages 871-873

  Habibpour, Omid ^a   Cherednichenko, Sergey ^a   Vukusic, Josip ^a   Stake, Jan ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Dielectric; field effect transistors (FETs); graphene; microwave transistors

Indexed keywords

DC CHARACTERISTICS; DIELECTRIC; FORMATION PROCESS; GATE LENGTH; GRAPHENE LATTICES; HIGH PRESSURE; LOW-DENSITY PLASMAS; MICROWAVE CHARACTERIZATION; MICROWAVE TRANSISTORS; ROOM TEMPERATURE; SILICON-NITRIDE GATE DIELECTRICS; TOP-GATE;

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; CUTOFF FREQUENCY; DIELECTRIC MATERIALS; GATES (TRANSISTOR); GRAPHENE; MESFET DEVICES; MICROWAVE DEVICES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; TRANSISTORS;

GATE DIELECTRICS;

EID: 79959781416     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2147755     Document Type: Article

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