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Volumn 73, Issue , 2012, Pages 27-31

Electrical compact modelling of graphene transistors

Author keywords

Circuit; Compact; Electrical; Graphene; LNA; Model; Noise; SPICE; Transistor

Indexed keywords

AC MEASUREMENTS; CIRCUIT DESIGNS; COMPACT; COMPACT MODEL; COMPACT MODELLING; ELECTRICAL; FIGURES OF MERITS; GRAPHENE TRANSISTORS; INPUT AND OUTPUTS; LNA; NOISE; POWER GAINS; REVERSE ISOLATION; STABILITY FACTOR; TRANSIT FREQUENCY; VOLTAGE GAIN;

EID: 84859641057     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.02.002     Document Type: Article
Times cited : (34)

References (19)
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    • Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels
    • S.A. Thiele, J.A. Schaefer, and F. Schwierz Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels J Appl Phys 107 2010 094505
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    • Han Wang, A. Hsu, Jing Kong, D. Antoniadis, and T. Palacios Compact virtual-source current-voltage model for top- and back-gated graphene field-effect transistors IEEE Transactions on Electron Devices 58 2011 1523 1533
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.