Ultra-low resistance ohmic contacts in graphene field effect transistors

Applied Physics Letters

Volumn 100, Issue 20, 2012, Pages

  Moon, J S ^a   Antcliffe, M ^a   Seo, H C ^a   Curtis, D ^a   Lin, S ^a   Schmitz, A ^a   Milosavljevic, I ^a   Kiselev, A A ^a   Ross, R S ^a   Gaskill, D K ^b   Campbell, P M ^b   Fitch, R C ^c   Lee, K M ^d   Asbeck, P ^d  

^a Hughes Aircraft Co   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH CURRENT DENSITIES; HIGH-SPEED; HYDROGEN INTERCALATION; ON-RESISTANCE; SOURCE-DRAIN; SOURCE-DRAIN VOLTAGE; SPECIFIC CONTACT RESISTIVITY; TRANSMISSION LINE METHODS;

CONTACT RESISTANCE; ELECTRIC CONTACTORS; HAFNIUM OXIDES; HIGH ELECTRON MOBILITY TRANSISTORS; HYDROGEN; OHMIC CONTACTS;

GRAPHENE;

EID: 84861814520     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4719579     Document Type: Article

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