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Volumn 2, Issue 15, 2014, Pages 2692-2701

Different characteristics of InGaN/GaN multiple quantum well heterostructures grown on m- and r-planes of a single n-GaN nanowire using metalorganic chemical vapor deposition

Author keywords

[No Author keywords available]

Indexed keywords

COMPARATIVE ANALYSIS; EXPERIMENTAL CONDITIONS; NON-RADIATIVE RECOMBINATIONS; OPTOELECTRONIC CHARACTERIZATION; POLARIZATION-INDUCED EFFECTS; QUANTUM WELL HETEROSTRUCTURES; SCANNING TRANSMISSION ELECTRON MICROSCOPY; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE;

EID: 84897909428     PISSN: 20507534     EISSN: 20507526     Source Type: Journal    
DOI: 10.1039/c3tc32212b     Document Type: Article
Times cited : (36)

References (54)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.