Utilizing the unique properties of nanowire MOSFETs for RF applications

Nano Letters

Volumn 13, Issue 4, 2013, Pages 1549-1554

  Razavieh, Ali ^a   Mehrotra, Saumitra ^a   Singh, Navab ^b   Klimeck, Gerhard ^a   Janes, David ^a   Appenzeller, Joerg ^a  

^a Purdue University   (United States)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

1 D transport; Ballistic transport; linearity; nanowire transistor; quantum capacitance; RF CMOS; transconductance

Indexed keywords

1-D TRANSPORT; BALLISTIC TRANSPORTS; LINEARITY; NANOWIRE TRANSISTORS; QUANTUM CAPACITANCE; RF-CMOS;

BALLISTICS; CAPACITANCE; HIGH ELECTRON MOBILITY TRANSISTORS; NANOWIRES; TRANSCONDUCTANCE; TRANSPORT PROPERTIES;

QUANTUM CHEMISTRY;

NANOWIRE; SILICON;

BALLISTICS; CHEMISTRY; ELECTRIC CAPACITANCE; EQUIPMENT DESIGN; PARTICLE SIZE; RADIO FREQUENCY IDENTIFICATION DEVICE; SEMICONDUCTOR; ARTICLE; RADIOFREQUENCY IDENTIFICATION;

ELECTRIC CAPACITANCE; EQUIPMENT DESIGN; FORENSIC BALLISTICS; NANOWIRES; PARTICLE SIZE; RADIO FREQUENCY IDENTIFICATION DEVICE; SILICON; TRANSISTORS, ELECTRONIC;

EID: 84876014176     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl3047078     Document Type: Article

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