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Volumn 53, Issue 3, 2009, Pages 336-340
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Optical properties studies in InGaN/GaN multiple-quantum well
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a
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Author keywords
GaN; Light emitting diodes; Localization effects; Longitudinal optical phonon; Photoluminescence
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Indexed keywords
CURRENT DENSITY;
DIODES;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
LIGHT;
LIGHT EMISSION;
LIGHT EMITTING DIODES;
OPTICAL PROPERTIES;
PHONONS;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM DOTS;
SEMICONDUCTOR QUANTUM WIRES;
ACTIVE LAYERS;
BLUE LEDS;
BLUE LIGHT-EMITTING;
CARRIER RELAXATIONS;
COMPARATIVE STUDIES;
ENERGY SEPARATIONS;
GAN;
INDIUM FRACTIONS;
INGAN/GAN;
LOCALIZATION EFFECTS;
LOCALIZED STATE;
LONGITUDINAL-OPTICAL-PHONON;
LOW TEMPERATURES;
LOWER ENERGIES;
MULTIPLE-QUANTUM WELLS;
PEAK ENERGIES;
PHONON ENERGIES;
PHONON REPLICAS;
QUANTUM WELLS;
RADIATIVE RECOMBINATIONS;
RED SHIFTS;
S-SHAPED;
TEMPERATURE BEHAVIORS;
TEMPERATURE DEPENDENTS;
TEMPERATURE-DEPENDENT PHOTOLUMINESCENCES;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 61349192166
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/j.sse.2009.01.005 Document Type: Article |
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Times cited : (20)
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References (15)
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