Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 42-45, 2005, Pages

  Masui, Hisashi ^a   Chakraborty, Arpan ^a   Haskell, Benjamin A ^a   Mishra, Umesh K ^a   Speck, James S ^a   Nakamura, Shuji ^a   DenBaars, Steven P ^a  

^a University of California   (United States)

Author keywords

Electroluminescence (EL); Light emitting diode (LED); Non polar plane; Polarization; Quantum well (QW)

Indexed keywords

ELECTROLUMINESCENCE; GALLIUM NITRIDE; LIGHT EMITTING DIODES; LIGHT POLARIZATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

BIAXIAL STRAIN; NON-POLAR PLANE; POLARIZED LIGHT EMISSION;

LIGHT EMISSION;

EID: 30344482898     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L1329     Document Type: Article

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