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Volumn 311, Issue 10, 2009, Pages 2906-2909

Photoluminescence study of Si-doped a-plane GaN grown by MOVPE

(7) Li, Dabing a,b Ma, Bei a Miyagawa, Reina a Hu, Weiguo a Narukawa, Mitsuhisa a Miyake, Hideto a Hiramatsu, Kazumasa a

a MIE UNIVERSITY (Japan)

b CHANGCHUN INSTITUTE OF OPTICS (China)

Author keywords

A1. Photoluminescence; A1. Si doping; A3. MOVPE; B1. a Plane GaN

Indexed keywords

A-PLANE GAN; A1. PHOTOLUMINESCENCE; A1. SI DOPING; A3. MOVPE; B1. A-PLANE GAN; DOPING CONCENTRATION; EMISSION PEAKS; INTENSITY-DEPENDENT; LOW TEMPERATURES; METAL-ORGANIC VAPOR PHASE EPITAXY; MIRROR-LIKE SURFACE; MOVPE; PL MEASUREMENTS; PL SPECTRA;

CRYSTAL GROWTH; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; OPTICAL MICROSCOPY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SILICON;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 65749113173 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2009.01.041 Document Type: Article

Times cited : (23)

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