Light-polarization characteristics of electroluminescence from InGaN/GaN light-emitting diodes prepared on (112̄2) -plane GaN

Journal of Applied Physics

Volumn 100, Issue 11, 2006, Pages

  Masui, Hisashi ^a   Baker, Troy J ^a   Iza, Michael ^a   Zhong, Hong ^a   Nakamura, Shuji ^a   Denbaars, Steven P ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION INTENSITY; EMISSION PEAK ENERGIES; POLARIZERS;

BAND STRUCTURE; ELECTROLUMINESCENCE; ELECTRON ENERGY LEVELS; LIGHT POLARIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

LIGHT EMITTING DIODES;

EID: 33845757205     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2382667     Document Type: Article

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