Simulations, practical limitations, and novel growth technology for InGaN-based solar cells

IEEE Journal of Photovoltaics

Volumn 4, Issue 2, 2014, Pages 601-606

  Fabien, Chloe A M ^a   Moseley, Michael ^a,b   Gunning, Brendan ^a   Doolittle, W Alan ^a   Fischer, Alec M ^c   Wei, Yong O ^c   Ponce, Fernando A ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Crystal microstructure; doping; indium gallium nitride (InGaN); semiconductor device modeling; semiconductor growth; solar cell

Indexed keywords

GROWTH TECHNOLOGIES; HETEROJUNCTION DEVICES; HIGH-EFFICIENCY; HOMOJUNCTION; INDIUM GALLIUM NITRIDE; P-TYPE NITRIDES; PHOTOVOLTAICS; THEORETICAL STUDY;

CRYSTAL MICROSTRUCTURE; DOPING (ADDITIVES); EFFICIENCY; GALLIUM NITRIDE; HETEROJUNCTIONS; INDIUM; INDIUM ALLOYS; PHASE SEPARATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; SOLAR CELLS;

SEMICONDUCTOR DOPING;

EID: 84897591681     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2013.2292748     Document Type: Article

References (46)

1. A. Bhuiyan, K. Sugita, A. Hashimoto, and A. Yamamoto, "InGaN solar cells: Present state of the art and important challenges," IEEE J. Photovoltaics, vol. 2, no. 3, pp. 276-293, Jul. 2012.
2. E. Trybus, G. Namkoong, W. Henderson, S. Burnham, W. A. Doolittle, M. Cheung, and A. Cartwright, "InN: A material with photovoltaic promise and challenges," J. Cryst. Growth, vol. 288, pp. 218-224, Mar. 2006. (Pubitemid 43243840)
3. A. S. Bouazzi, H. Hamzaoui, and B. Rezig, "Theoretical possibilities of Inx Ga1xN tandem PV structures," Sol. EnergyMater. Sol. Cells, vol. 87, pp. 595-603, May 2005. (Pubitemid 40556604)
4. J. F. Muth, A. J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, "Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements," Appl. Phys. Lett., vol. 71, pp. 2572-2574, Dec. 1997. (Pubitemid 127608522)
5. Y. Nanishi, Y. Saito, and T. Yamaguchi, "RF-molecular beam epitaxy growth and properties of InN and related alloys," Jpn. J. Appl. Phys., vol. 42, pp. 2549-2559, May 2003.
6. J. Wu, W. Walukiewicz, K. M. Yu, W. Shan, J. W. Ager, E. E. Haller, L. Hai, W. J. Schaff, W. K. Metzger, and S. Kurtz, "Superior radiation resistance of In1x GaxN alloys: Full-solar-spectrum photovoltaic material system," J. Appl. Phys., vol. 94, pp. 6477-6482, 2003.
7. J. R. Lang, C. J. Neufeld, C. A. Hurni, S. C. Cruz, E. Matioli, U. K. Mishra, and J. S. Speck, "High external quantum efficiency and fillfactor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy," Appl. Phys. Lett., vol. 98, pp. 131115-1-131115-3, Mar. 2011.
8. E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, C. Xu, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, "High internal and external quantum efficiency InGaN/GaN solar cells," Appl. Phys. Lett., vol. 98, pp. 021102-1-021102-3, Jan. 2011.
9. J. P. Shim, M. Choe, S. R. Jeon, D. Seo, T. Lee, and D. S. Lee, "InGaNbased p-i-n solar cells with graphene electrodes," Appl. Phys. Exp., vol. 4, pp. 052302-1-052302-3, May 2011.
10. L. Sang, M. Liao, N. Ikeda, Y. Koide, and M. Sumiya, "Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer," Appl. Phys. Lett., vol. 99, pp. 161109-1-161109-3, Oct. 2011.
11. X.-M. Cai, S.-W. Zeng, and B.-P. Zhang, "Fabrication and characterization of InGaN p-i-n homojunction solar cell," Appl. Phys. Lett., vol. 95, pp. 173504-1-173504-3, Oct. 2009.
12. S.-N. Lee, T. Sakong, W. Lee, H. Paek, J. Son, E. Yoon, O. Nam, and Y. Park, "Characterization of optical and electrical quality of Mg-doped Inx Ga1xNgrown by MOCVD," J. Cryst. Growth, vol. 261, pp. 249-252, Jan. 2004.
13. S. Brochen, J. Brault, S. Chenot, A. Dussaigne, M. Leroux, and B. Damilano, "Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy," Appl. Phys. Lett., vol. 103, pp. 032102-1-032102-4, Jul. 2013.
14. C. G. Van deWalle, C. Stampfl, and J. Neugebauer, "Theory of doping and defects in III-V nitrides," J. Cryst. Growth, vol. 189-190, pp. 505-510, Jun. 1998. (Pubitemid 128420803)
15. B. N. Pantha, H. Wang, N. Khan, J. Y. Lin, and H. X. Jiang, "Origin of background electron concentration in Inx Ga1xN alloys," Phys. Rev. B, vol. 84, pp. 075327-1-075327-6, Aug. 2011.
16. G. B. Stringfellow, "Microstructures produced during the epitaxial growth of InGaN alloys," J. Cryst. Growth, vol. 312, pp. 735-49, Mar. 2010.
17. P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Electrical characterization of GaN p-n junctions with and without threading dislocations," Appl. Phys. Lett., vol. 73, pp. 975-977, Aug. 1998. (Pubitemid 128671730)
18. J. Abell and T. D. Moustakas, "The role of dislocations as nonradiative recombination centers in InGaN quantum wells," Appl. Phys. Lett., vol. 92, pp. 091901-1-091901-3, Mar. 2008.
19. E. T. Yu, X. Z. Dang, P. M. Asbeck, S. S. Lau, and G. J. Sullivan, "Spontaneous and piezoelectric polarization effects in III-V nitride heterostructures," J. Vac. Sci. Technol. B, vol. 17, pp. 1742-1749, Jul. 1999. (Pubitemid 129721016)
20. Z. Q. Li, M. Lestradet, Y. G. Xiao, and S. Li, "Effects of polarization charge on the photovoltaic properties of InGaN solar cells," Phys. Status Solidi A, vol. 208, pp. 928-931, Apr. 2011.
21. J.-Y. Chang and Y.-K. Kuo, "Numerical study on the influence of piezoelectric polarization on the performance of p-on-n (0001)-face GaN/InGaN p-i-n solar cells," IEEE Electron Device Lett., vol. 32, no. 7, pp. 937-939, Jul. 2011.
22. APSYS (Nov. 2013). [Online]. Available: http://www.crosslight.com
23. G. F. Brown, J. W. Ager, III, W. Walukiewicz, and J. Wu, "Finite element simulations of compositionally graded InGaN solar cells," Sol. Energy Mater. Sol. Cells, vol. 94, pp. 478-483, Mar. 2010.
24. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, L. Hai, and W. J. Schaff, "Small band gap bowing in In1x GaxN alloys," Appl. Phys. Lett., vol. 80, pp. 4741-4743, Jun. 2002.
25. D. M. Caughey and R. E. Thomas, "Carrier mobilities in silicon empirically related to doping and field," Proc. IEEE, vol. 55, no. 12, pp. 2192-2193, Dec. 1967.
26. Z. Z. Bandic, P. M. Bridger, E. C. Piquette, and T. C. McGill, "Minority carrier diffusion length and lifetime in GaN," Appl. Phys. Lett., vol. 72, pp. 3166-3168, Jun. 1998. (Pubitemid 128677279)
27. F. Chen, A. N. Cartwright, H. Lu, and W. J. Schaff, "Temperature dependence of carrier lifetimes in InN," Phys. Status Solidi A, vol. 202, pp. 768-772, Apr. 2005. (Pubitemid 41365091)
28. P. Scajev, K. Jarasiunas, S. Okur, U. Ozgur, and H. Morkoc, "Carrier dynamics in bulk GaN," J. Appl. Phys., vol. 111, pp. 023702-1-023702-8, Jan. 2012.
29. M. Boroditsky, I. Gontijo, M. Jackson, R. Vrijen, E. Yablonovitch, T. Krauss, C.-C. Cheng, A. Scherer, R. Bhat, and M. Krames, "Surface recombination measurements on III-V candidate materials for nanostructure light-emitting diodes," J. Appl. Phys., vol. 87, pp. 3497-3504, Apr. 2000.
30. H. Kitagawa, T. Suto, M. Fujita, Y. Tanaka, T. Asano, and S. Noda, "Green photoluminescence from GaInN photonic crystals," Appl. Phys. Exp., vol. 1, pp. 032004-1-032004-3, Mar. 2008.
31. V. Fiorentini, F. Bernardini, and O. Ambacher, "Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures, " Appl. Phys. Lett., vol. 80, pp. 1204-1206, Feb. 2002.
32. H. Zhang, E. J. Miller, E. T. Yu, C. Poblenz, and J. S. Speck, "Measurement of polarization charge and conduction-band offset at Inx Ga1x N/GaN heterojunction interfaces," Appl. Phys. Lett., vol. 84, pp. 4644-4646, Jun. 2004.
33. B. N. Pantha, A. Sedhain, J. Li, J. Y. Lin, and H. X. Jiang, "Electrical and optical properties of p-type InGaN," Appl. Phys. Lett., vol. 95, pp. 261904-1-261904-3, Dec. 2009.
34. C. Honsberg, O. Jani, A. Doolittle, E. Trybus, G. Namkoong, I. Ferguson, D. Nicol, and A. Payne, "InGaN-A new solar cell material," presented at the 19th Eur. Photovoltaic Sol. Energy Conf. Exhib., Paris, France, 2004.
35. M. A. Green, "Efficiency limits, losses and measurement," in Solar Cells: Operating Principles, Technology, and System Applications. Englewood Cliffs, NJ, USA: Prentice-Hall, 1982, pp. 85-91.
36. S. D. Burnham, G. Namkoong, D. C. Look, B. Clafin, andW. A. Doolittle, "Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy," J. Appl. Phys., vol. 104, pp. 024902-1-024902-5, Jul. 2008.
37. S. D. Burnham, G. Namkoong, K.-K. Lee, and W. A. Doolittle, "Reproducible reflection high energy electron diffraction signatures for improvement of AlN using in situ growth regime characterization," J. Vac. Sci. Technol. B, vol. 25, pp. 1009-1013, May 2007. (Pubitemid 46872409)
38. G. Namkoong, E. Trybus, K. K. Lee, M. Moseley, W. A. Doolittle, and D. C. Look, "Metal modulation epitaxy growth for extremely high hole concentrations above 1019 cm3 in GaN," Appl. Phys. Lett., vol. 93, pp. 172112-1-172112-3, Oct. 2008.
39. E. Trybus, W. A. Doolittle, M. Moseley, W. Henderson, D. Billingsley, G. Namkoong, and D. C. Look, "Extremely high hole concentrations in c-plane GaN," Phys. Status Solidi C, vol. 6, pp. S788-S791, Jun. 2009.
40. B. Gunning, J. Lowder, M. Moseley, and W. A. Doolittle, "Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN," Appl. Phys. Lett., vol. 101, pp. 082106-1-082106-5, Aug. 2012.
41. N. Sipe and R. Venkat, "Modeling GaN growth by plasma assisted MBE in the presence of low Mg flux," Mater. Res. Soc. Internet J. Nitride Semicond. Res., vol. 7, pp. 11-1, 2002.
42. C. G. Van de Walle and J. Neugebauer, "Defects, impurities and doping levels in wide-band-gap semiconductors," Braz. J. Phys., vol. 26, pp. 163-166, Mar. 1996. (Pubitemid 126680660)
43. M. Moseley, J. Lowder, D. Billingsley, and W. A. Doolittle, "Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap," Appl. Phys. Lett., vol. 97, pp. 191902-1-191902-3, Nov. 2010.
44. M. Moseley, B. Gunning, J. Greenlee, J. Lowder, G. Namkoong, and W. A. Doolittle, "Observation and control of the surface kinetics of In-GaN for the elimination of phase separation," J. Appl. Phys., vol. 112, pp. 014909-1-014909-9, Jul. 2012.
45. A. M. Fischer, Y. O. Wei, F. A. Ponce, M. Moseley, B. Gunning, and W. A. Doolittle, "Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation," Appl. Phys. Lett., vol. 103, pp. 131101-1-131101-4, Sep. 2013.
46. D. Holec, P. M. F. J. Costa, M. J. Kappers, and C. J. Humphreys, "Critical thickness calculations for InGaN/GaN," J. Cryst. Growth, vol. 303, pp. 314-317, May 2007. (Pubitemid 46550497)