메뉴 건너뛰기




Volumn 84, Issue 7, 2011, Pages

Origin of background electron concentration in InxGa 1-xN alloys

Author keywords

[No Author keywords available]

Indexed keywords


EID: 80052496489     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.84.075327     Document Type: Article
Times cited : (45)

References (35)
  • 6
    • 34848905285 scopus 로고    scopus 로고
    • Design and characterization of GaNInGaN solar cells
    • DOI 10.1063/1.2793180
    • O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2793180 91, 132117 (2007). (Pubitemid 47502577)
    • (2007) Applied Physics Letters , vol.91 , Issue.13 , pp. 132117
    • Jani, O.1    Ferguson, I.2    Honsberg, C.3    Kurtz, S.4
  • 9
    • 54949143962 scopus 로고    scopus 로고
    • APPLAB 0003-6951 10.1063/1.3006332
    • J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3006332 93, 162107 (2008).
    • (2008) Appl. Phys. Lett. , vol.93 , pp. 162107
    • Li, J.1    Lin, J.Y.2    Jiang, H.X.3
  • 14
    • 38549181838 scopus 로고    scopus 로고
    • Sources of unintentional conductivity in InN
    • DOI 10.1063/1.2832369
    • A. Janotti and C. G. Van de Walle, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2832369 92, 032104 (2008). (Pubitemid 351160611)
    • (2008) Applied Physics Letters , vol.92 , Issue.3 , pp. 032104
    • Janotti, A.1    Van De Walle, C.G.2
  • 22
    • 33745512325 scopus 로고    scopus 로고
    • Origin of the n-type conductivity of InN: The role of positively charged dislocations
    • DOI 10.1063/1.2214156
    • L. F. J. Piper, T. D. Veal, C. F. McConville, H. Lu, and W. J. Schaff, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2214156 88, 252109 (2006). (Pubitemid 43959084)
    • (2006) Applied Physics Letters , vol.88 , Issue.25 , pp. 252109
    • Piper, L.F.J.1    Veal, T.D.2    McConville, C.F.3    Lu, H.4    Schaff, W.J.5
  • 24
    • 0001094729 scopus 로고    scopus 로고
    • APPLAB 0003-6951 10.1063/1.117683
    • I. Ho and G. B. Stringfellow, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.117683 69, 2701 (1996).
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 2701
    • Ho, I.1    Stringfellow, G.B.2
  • 27
    • 0028271267 scopus 로고
    • JCRGAE 0022-0248 10.1016/0022-0248(94)90727-7
    • J. E. Ayers, J. Cryst. Growth JCRGAE 0022-0248 10.1016/0022-0248(94) 90727-7 135, 71 (1994).
    • (1994) J. Cryst. Growth , vol.135 , pp. 71
    • Ayers, J.E.1
  • 29
    • 43049113857 scopus 로고    scopus 로고
    • High mobility InN epilayers grown on AlN epilayer templates
    • DOI 10.1063/1.2917473
    • N. Khan, A. Sedhain, J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2917473 92, 172101 (2008). (Pubitemid 351624895)
    • (2008) Applied Physics Letters , vol.92 , Issue.17 , pp. 172101
    • Khan, N.1    Sedhain, A.2    Li, J.3    Lin, J.Y.4    Jiang, H.X.5
  • 34


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.