Modeling GaN growth by plasma assisted MBE in the presence of low Mg flux

MRS Internet Journal of Nitride Semiconductor Research

Volumn 7, Issue , 2002, Pages

  Sipe, Nathan ^a   Venkat, Rama ^a  

^a UNIVERSITY OF NEVADA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; LIGHT EMITTING DIODES; MAGNESIUM PRINTING PLATES; MOLECULAR BEAM EPITAXY; MONOLAYERS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; ULTRAVIOLET RADIATION;

RATE EQUATION MODELS; SURFACE KINETICS; ULTRA-VIOLET LASERS;

GALLIUM NITRIDE;

EID: 3042688832     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300000272     Document Type: Article

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