Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

Applied Physics Letters

Volumn 103, Issue 3, 2013, Pages

  Brochen, Stéphane ^a   Brault, Julien ^a   Chenot, Sébastien ^a   Dussaigne, Amélie ^a   Leroux, Mathieu ^a   Damilano, Benjamin ^a  

^a CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR CONCENTRATIONS; CAPACITANCE VOLTAGE; DOPANT CONCENTRATIONS; EXPERIMENTAL OBSERVATION; FREE HOLE DENSITY; ROOM TEMPERATURE; SECONDARY ION MASS SPECTROSCOPY; STRONG DEPENDENCES;

BINDING ENERGY; EPITAXIAL GROWTH; GALLIUM NITRIDE; MAGNESIUM; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 84881501326     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4813598     Document Type: Article

References (38)

1. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 86, 1 (1999). 10.1063/1.371145
2. G. Namkoong, W. A. Doolittle, and A. S. Brown, Appl. Phys. Lett. 77, 4386 (2000). 10.1063/1.1334942
3. S. Pezzagna, P. Vennéguès, N. Grandjean, and J. Massies, J. Cryst. Growth 269, 249 (2004). 10.1016/j.jcrysgro.2004.05.067
4. P. Vennéguès, M. Benaissa, S. Dalmasso, M. Leroux, E. Feltin, P. De Mierry, B. Beaumont, B. Damilano, N. Grandjean, and P. Gibart, Mater. Sci. Eng. B 93, 224 (2002). 10.1016/S0921-5107(02)00046-6
5. P. Vennéguès, M. Leroux, S. Dalmasso, M. Benaissa, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont, J. Massies, and P. Gibart, Phys. Rev. B 68, 235214 (2003). 10.1103/PhysRevB.68.235214
6. O. Gelhausen, M. R. Phillips, E. M. Goldys, T. Paskova, B. Monemar, M. Strassburg, and A. Hoffmann, Phys. Rev. B 69, 125210 (2004). 10.1103/PhysRevB.69.125210
7. G. Namkoong, E. Trybus, K. K. Lee, M. Moseley, W. A. Doolittle, and D. C. Look, Appl. Phys. Lett. 93, 172112 (2008). 10.1063/1.3005640
8. L. Yu, L. Jia, D. Qiao, S. Lau, J. Li, J. Lin, and H. X. Jiang, IEEE Trans. Electron Devices 50, 292 (2003). 10.1109/TED.2002.808558
9. D. C. Look, Electrical Characterization of GaAs Materials and Devices (Wiley, 1992).
10. P. Rinke, M. Winkelnkemper, A. Qteish, D. Bimberg, J. Neugebauer, and M. Scheffler, Phys. Rev. B 77, 075202 (2008). 10.1103/PhysRevB.77.075202
11. A. V. Rodina, M. Dietrich, A. Göldner, L. Eckey, A. Hoffmann, A. L. Efros, M. Rosen, and B. K. Meyer, Phys. Rev. B 64, 115204 (2001). 10.1103/PhysRevB.64.115204
12. K. S. Kim, M. G. Cheong, C.-H. Hong, G. M. Yang, K. Y. Lim, E.-K. Suh, and H. J. Lee, Appl. Phys. Lett. 76, 1149 (2000). 10.1063/1.125966
13. M. G. Cheong, K. S. Kim, C. S. Kim, R. J. Choi, H. S. Yoon, N. W. Namgung, E.-K. Suh, and H. J. Lee, Appl. Phys. Lett. 80, 1001 (2002). 10.1063/1.1448666
14. H. J. Lee and D. C. Look, J. Appl. Phys. 54, 4446 (1983). 10.1063/1.332640
15. M. Cheong, K. Kim, N. Namgung, M. Han, G. Yang, C.-H. Hong, E.-K. Suh, K. Lim, H. Lee, and A. Yoshikawa, J. Cryst. Growth 221, 734 (2000). 10.1016/S0022-0248(00)00809-5
16. B. Šantić, Semicond. Sci. Technol. 21, 1484 (2006). 10.1088/0268-1242/21/10/022
17. P. P. Debye and E. M. Conwell, Phys. Rev. 93, 693 (1954). 10.1103/PhysRev.93.693
18. G. L. Pearson and J. Bardeen, Phys. Rev. 75, 865 (1949). 10.1103/PhysRev.75.865
19. W. Götz, R. Kern, C. Chen, H. Liu, D. Steigerwald, and R. Fletcher, Mater. Sci. Eng. B 59, 211 (1999). 10.1016/S0921-5107(98)00393-6
20. K. Karch, J.-M. Wagner, and F. Bechstedt, Phys. Rev. B 57, 7043 (1998). 10.1103/PhysRevB.57.7043
21. J. L. Lyons, A. Janotti, and C. G. Van de Walle, Phys. Rev. Lett. 108, 156403 (2012). 10.1103/PhysRevLett.108.156403
22. M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies, and P. Gibart, J. Appl. Phys. 86, 3721 (1999). 10.1063/1.371242
23. A. K. Viswanath, E.-j. Shin, J. I. Lee, S. Yu, D. Kim, B. Kim, Y. Choi, and C.-H. Hong, J. Appl. Phys. 83, 2272 (1998). 10.1063/1.366985
24. P. Kozodoy, S. P. DenBaars, and U. K. Mishra, J. Appl. Phys. 87, 770 (2000). 10.1063/1.371939
25. P. Kozodoy, H. Xing, S. P. DenBaars, U. K. Mishra, A. Saxler, R. Perrin, S. Elhamri, and W. C. Mitchel, J. Appl. Phys. 87, 1832 (2000). 10.1063/1.372098
26. W.-C. Ke, S.-J. Lee, S.-L. Chen, C.-Y. Kao, and W.-C. Houng, Mater. Chem. Phys. 133, 1029 (2012). 10.1016/j.matchemphys.2012.01.128
27. W. Götz, N. M. Johnson, J. Walker, D. P. Bour, and R. A. Street, Appl. Phys. Lett. 68, 667 (1996). 10.1063/1.116503
28. B. Šantić, Superlattices Microstruct. 36, 445 (2004). 10.1016/j.spmi.2004.09.008
29. L. Konczewicz, E. Litwin-Staszewska, S. Contreras, R. Piotrzkowski, and L. Dmowski, Phys. Status Solidi B 246, 658 (2009). 10.1002/pssb.200880521
30. H. Nakayama, P. Hacke, M. R. H. Khan, T. Detchprohm, K. Hiramatsu, and N. Sawaki, Jpn. J. Appl. Phys. 35, L282 (1996). 10.1143/JJAP.35.L282
31. T. Tanaka, A. Watanabe, H. Amano, Y. Kobayashi, I. Akasaki, S. Yamazaki, and M. Koike, Appl. Phys. Lett. 65, 593 (1994). 10.1063/1.112309
32. D. J. Kim, D. Y. Ryu, N. A. Bojarczuk, J. Karasinski, S. Guha, S. H. Lee, and J. H. Lee, J. Appl. Phys. 88, 2564 (2000). 10.1063/1.1286925
33. J. W. Huang, T. F. Kuech, H. Lu, and I. Bhat, Appl. Phys. Lett. 68, 2392 (1996). 10.1063/1.116144
34. Y. Nakano, O. Fujishima, and T. Kachi, J. Appl. Phys. 96, 415 (2004). 10.1063/1.1755856
35. N. D. Nguyen, M. Germain, M. Schmeits, B. Schineller, and M. Heuken, J. Appl. Phys. 90, 985 (2001). 10.1063/1.1379345
36. A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean, J. Appl. Phys. 103, 013110 (2008). 10.1063/1.2829819
37. R. R. Lieten, V. Motsnyi, L. Zhang, K. Cheng, M. Leys, S. Degroote, G. Buchowicz, O. Dubon, and G. Borghs, J. Phys. D: Appl. Phys. 44, 135406 (2011). 10.1088/0022-3727/44/13/135406
38. S. Nikishin, I. Chary, B. Borisov, V. Kuryatkov, Y. Kudryavtsev, R. Asomoza, S. Y. Karpov, and M. Holtz, Appl. Phys. Lett. 95, 163502 (2009). 10.1063/1.3242420