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Applied Physics Letters

Volumn 101, Issue 8, 2012, Pages

Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN

(4) Gunning, Brendan a Lowder, Jonathan a Moseley, Michael a Alan Doolittle, W a

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION EFFICIENCY; CRYOGENIC TEMPERATURES; DOPED SAMPLE; EFFECTIVE ACTIVATION ENERGY; FREEZE OUT; HALL EFFECT MEASUREMENT; HEAVILY DOPED; HIGH RESISTIVITY; IMPURITY BAND CONDUCTION; MOTT-INSULATOR TRANSITION; P-TYPE GAN; TEMPERATURE DEPENDENT;

ACTIVATION ENERGY; HOLE CONCENTRATION;

GALLIUM NITRIDE;

EID: 84865479739 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4747466 Document Type: Article

Times cited : (73)

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