Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation

Applied Physics Letters

Volumn 103, Issue 13, 2013, Pages

  Fischer, A M ^a   Wei, Y O ^a   Ponce, F A ^a   Moseley, M ^b   Gunning, B ^b   Doolittle, W A ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL THICKNESS; CRYSTALLINE QUALITY; GROWTH TECHNIQUES; LATTICE MISFITS; LOW DEFECT DENSITIES; LOW TEMPERATURES; LUMINESCENCE INTENSITY; NITRIDE SEMICONDUCTORS;

LATTICE MISMATCH; LUMINESCENCE; METALLIC FILMS; SEMICONDUCTOR GROWTH; STRAIN RELAXATION;

INDIUM;

EID: 84885004896     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4822122     Document Type: Article

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