Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition

Journal of Physics D: Applied Physics

Volumn 46, Issue 50, 2013, Pages

  Perros, Alexander Pyymaki ^a   Hakola, Hanna ^b   Sajavaara, Timo ^c   Huhtio, Teppo ^a   Lipsanen, Harri ^a  

^a AALTO UNIVERSITY   (Finland)

^b TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^c UNIVERSITY OF JYVÄSKYLÄ   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84894107172     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/50/505502     Document Type: Article

References (55)

1. Meng W J and Doll G L 1996 Ion energy effects in AlN thin films grown on Si(1 1 1) J. Appl. Phys. 79 1788
2. Morita M, Uesugi N, Isogai S, Tsubouchi K and Mikoshiba N 1981 Epitaxial growth of aluminum nitride on sapphure using metalorganic chemical vapour deposition Japan. J. Appl. Phys. 20 17-23
3. Stevens K S, Ohtani A, Kinniburgh M and Beresford R 1994 Microstructure of AlN on Si(1 1 1) grown by plasma-assisted molecular beam epitaxy Appl. Phys. Lett. 65 321
4. Nomura H, Meikle S, Nakanishi Y and Hatanaka Y 1991 Remote plasma deposition of aluminum nitride J. Appl. Phys. 69 990
5. Hironaka K, Nagashima T, Ikeda S, Azuma M, Takada K and Fukuyama H 2010 Characterization of AlN single crystal fabricated by a novel growth technique, 'pyrolytic transportation method' J. Cryst. Growth 312 2527-9
6. Riihela D, Ritala M, Matero R, Leskela M, Jokinen J and Haussalo P 1996 Low temperature deposition of ain films by an alternate supply of trimethyl aluminum and ammonia Chem. Vap. Depos. 2 277-83
7. Jokinen J, Haussalo P, Keinonen J, Ritala M, Riihelä D and Leskelä M 1996 Analysis of AIN thin films by combining TOF-ERDA and NRB techniques Thin Solid Films 289 159-65
8. Liu H, Bertolet D C and Rogers Jr J W 1994 The surface chemistry of aluminum nitride MOCVD on alumina using trimethylaluminum and ammonia as precursors Surf. Sci. 320 145
9. Liu X, Ramanathan S, Lee E and Seidel T E 2004 Atomic layer deposition of aluminum nitride thin films from trimethyl aluminum (TMA) and ammonia Mater. Res. Soc. Symp. Proc. 811 11
10. Choi B J, Yang J J, Zhang M-X, Norris K J, Ohlberg D A A, Kobayashi N P, Medeiros-Ribeiro G and Williams R S 2012 Nitride memristors Appl. Phys. A: Mater. Sci. Process. 109 1-4
11. Jussila H, Mattila P, Oksanen J, Perros A, Riikonen J, Bosund M, Varpula A, Huhtio T, Lipsanen H and Sopanen M 2012 High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning Appl. Phys. Lett. 100 071606
12. Mattila P, Bosund M, Jussila H, Tuomi T, Riikonen J, Huhtio T, Lipsanen H and Sopanen M 2012 Effect of atomic-layer-deposited AlN on near-surface InGaAs/GaAs structures Phys. Status Solidi 9 1560-2
13. Perros A, Bosund M, Sajavaara T, Laitinen M, Sainiemi L, Huhtio T and Lipsanen H 2012 Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas J. Vac. Sci. Technol. A 30 011504
14. Bosund M, Sajavaara T, Laitinen M, Huhtio T, Putkonen M, Airaksinen V-M and Lipsanen H 2011 Properties of AlN grown by plasma enhanced atomic layer deposition Appl. Surf. Sci. 257 7827-30
15. Alevli M, Ozgit C, Donmez I and Biyikli N 2011 The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition J. Cryst. Growth 335 51-7
16. Ozgit C, Donmez I, Alevli M and Biyikli N 2012 Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition Thin Solid Films 520 2750-5
17. Lei W and Chen Q 2013 Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition J. Vac. Sci. Technol. A 31 01A114
18. Kroll U, Meier J, Shah A, Mikhailov S and Weber J 1996 Hydrogen in amorphous and microcrystalline silicon films prepared by hydrogen dilution J. Appl. Phys. 80 4971
19. Incorvio M J 1989 X-ray photoelectron spectroscopic studies of metal/inhibitor systems: structure and bonding at the iron/amine interface J. Electrochem. Soc. 136 2493
20. Kerber S J 1996 The nature of hydrogen in x-ray photoelectron spectroscopy: general patterns from hydroxides to hydrogen bonding J. Vac. Sci. Technol. A 14 1314
21. Uyama H and Matsumoto O 1991 Ammonia formation process from nitrogen-hydrogen plasma prepared using microwave discharge 10th Int. Symp. on Plasma Chemistry ed U Ehlemann et al (Bochum: International Union of Pure and Applied Chemistry) p 6
22. Mackus A J M, Heil S B S, Langereis E, Knoops H C M, van de Sanden M C M and Kessels W M M 2010 Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes J. Vac. Sci. Technol. A 28 77
23. Rosso M, Arafat A, Schroën K, Giesbers M, Roper C S, Maboudian R and Zuilhof H 2008 Covalent attachment of organic monolayers to silicon carbide surfaces Langmuir ACS J. Surf. Colloids 24 4007-12
24. Profijt H B, Potts S E, van de Sanden M C M and Kessels W M M 2011 Plasma-assisted atomic layer deposition: basics, opportunities, and challenges J. Vac. Sci. Technol. A 29 050801
25. Kim J, Kim S, Jeon H, Cho M-H, Chung K-B and Bae C 2005 Characteristics of HfO2 thin films grown by plasma atomic layer deposition Appl. Phys. Lett. 87 053108
26. De Walle V C G and Johnson N M 1998 Semiconductors and Semimetals vol. 57, Gallium Nitride (GaN) ed J I Pankove and T D Moustakas (Boston, MA: Academic)
27. Losurdo M, Capezzuto P, Bruno G, Perna G and Capozzi V 2002 N2-H2 remote plasma nitridation for GaAs surface passivation Appl. Phys. Lett. 81 16
28. Mattila P, Bosund M, Huhtio T, Lipsanen H and Sopanen M 2012 Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition J. Appl. Phys. 111 063511
29. Bosund M, Mattila P, Aierken A, Hakkarainen T, Koskenvaara H, Sopanen M, Airaksinen V-M and Lipsanen H 2010 GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride Appl. Surf. Sci. 256 7434-7
30. Van Hemmen J L, Heil S B S, Klootwijk J H, Roozeboom F, Hodson C J, van de Sanden M C M and Kessels W M M 2007 Plasma and Thermal ALD of Al2O3 in a commercial 200 mm ALD reactor J. Electrochem. Soc. 154 G165
31. L'Ecuyer J 1976 An accurate and sensitive method for the determination of the depth distribution of light elements in heavy materials J. Appl. Phys. 47 381
32. Lanford W A and Rand M J 1978 The hydrogen content of plasma-deposited silicon nitride J. Appl. Phys. 49 2473
33. Dupuie J L 1992 The low temperature catalyzed chemical vapor deposition and characterization of aluminum nitride thin films J. Vac. Sci. Technol. A 10 18
34. Riikonen J, Kim W, Li C, Svensk O, Arpiainen S, Kainlauri M and Lipsanen H 2013 Photo-thermal chemical vapor deposition of graphene on copper Carbon 62 43-50
35. Knight D S, Weimer R, Pilione L and White W B 1990 Surface-enhanced Raman spectroscopy of chemical vapor deposited diamond films Appl. Phys. Lett. 56 1320
36. Parratt L G 1954 Surface studies of solids by total reflection of x-rays Phys. Rev. 95 359-69
37. Tiilikainen J, Bosund V, Tilli J-M, Sormunen J, Mattila M, Hakkarainen T and Lipsanen H 2007 Genetic algorithm using independent component analysis in x-ray reflectivity curve fitting of periodic layer structures J. Phys. D. Appl. Phys. 40 6000-4
38. Herzberg G and Huber K P 1950 Molecular Spectra and Molecular Structure IV. Constants of Diatomic Molecules (New York: Van Nostrand-Reinhold)
39. Coates J 2000 Encyclopedia of Analytical Chemistry ed R A Meyers (Chichester: Wiley) pp 10815-37
40. Lamber J B, Shurvell H F, Lightner D A and Cooks G R 1998 Organic Structurual Spectroscopy ed J Challice and B A Williams (Upper Saddle River, NJ: Prentice-Hall)
41. Bartram M E, Michalske T A, Rogers J W and Paine R T 1993 Nucleation and growth of aluminum nitride: self-limiting reactions and the regeneration of active sites using sequential exposures of trimethylaluminum and ammonia on silica at 600 K Chem. Mater. 5 1424-30
42. Bartram M E, Michalske T A, Rogers J W and Mayer T M 1991 Chemisorption of trimethylaluminum and ammonia on silica: mechanisms for the formation of aluminum-nitrogen bonds and the elimination of methyl groups bonded to aluminum Chem. Mater. 3 953-60
43. Bartram M E, Michalske T A and Rogers J W 1991 A reexamination of the chemisorption of trimethylaluminum on silica J. Phys. Chem. 95 4453-63
44. Jacob W and Unger M 1996 Experimental determination of the absorption strength of C-H vibrations for infrared analysis of hydrogenated carbon films Appl. Phys. Lett. 68 475
45. Titus E, Ali N, Cabral G, Madaleno J C, Neto V F, Gracio J, Ramesh Babu P, Sikder A K, Okpalugo T I and Misra D S 2006 Nitrogen and hydrogen related infrared absorption in CVD diamond films Thin Solid Films 515 201-6
46. Chabal Y J and Patel C K N 1984 Solid Hydrogen in Amorphous silicon: Phase Transition Phys. Rev. Lett. 53 1771-4
47. Löhneysen H v, Schink H J and Beyer W 1984 Direct Experimental Evidence for Molecular Hydrogen in Amorphous Si:H Phys. Rev. Lett. 52 549-52
48. Weber J, Hiller M and Lavrov E V 2007 Hydrogen molecules in semiconductors Phys. B: Condens. Matter 401-402 91-6
49. Meikle S, Nomura H, Nakanishi Y and Hatanaka Y 1990 Reactions of atomic nitrogen and trimethyl aluminum downstream from a nitrogen microwave plasma J. Appl. Phys. 67 483
50. Wang Y, Van Brunt R J and Olthoff J K 1998 Mass spectrometric measurement of molecular dissociation in inductively coupled plasmas J. Appl. Phys. 83 703
51. Jin-Seong P and Jung-Dae K 2010 Investigating the TiN Film Quality and Growth Behavior for Plasma-enhanced Atomic Layer Deposition Using TiCl4 and N2/H2/Ar Radicals J. Korean Phys. Soc. 57 806
52. Ogino A, Noguchi S and Nagatsu M 2011 Optimization of Amino Group Introduction onto Polyurethane Surface Using Ammonia and Argon Surface-Wave Plasma Japan. J. Appl. Phys. 50 08JF06
53. Puurunen R L, Root A, Sarv P, Haukka S, Iiskola E I, Lindblad M and Krause A O I 2000 Growth of aluminum nitride on porous silica by atomic layer chemical vapour deposition Appl. Surf. Sci. 165 193-202
54. Puurunen R L 2005 Surface chemistry of atomic layer deposition: a case study for the trimethylaluminum/water process J. Appl. Phys. 97 121301
55. LiBassi A, Ferrari A C, Stolojan V, Tanner B K, Robertson J and Brown L M 2000 Density, sp3 content and internal layering of DLC films by X-ray reflectivity and electron energy loss spectroscopy Diamond Relat. Mater. 9 771-6