Characterization of AlN single crystal fabricated by a novel growth technique, "pyrolytic transportation method"

Journal of Crystal Growth

Volumn 312, Issue 18, 2010, Pages 2527-2529

  Hironaka, Keiichiro ^a   Nagashima, Toru ^a   Ikeda, Susumu ^a   Azuma, Masanobu ^a   Takada, Kazuya ^a   Fukuyama, Hiroyuki ^b  

^a TOKUYAMA CORPORATION   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Crystal morphology; A1. X ray topography; A2. Growth from vapor; A2. Seed crystals; A3. Vapor phase epitaxy; B1. Nitrides

Indexed keywords

A2. SEED CRYSTALS; A3. VAPOR PHASE EPITAXY; CRYSTAL MORPHOLOGIES; GROWTH FROM VAPORS; SEED CRYSTAL; X-RAY TOPOGRAPHY;

ALUMINUM; ALUMINUM NITRIDE; CRYSTAL GROWTH; NITRIDES; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; TOPOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; VAPORS; X RAYS;

DISLOCATIONS (CRYSTALS);

EID: 77955347389     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.04.007     Document Type: Conference Paper

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