Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 31, Issue 1, 2013, Pages

  Lei, Wenwen ^a   Chen, Qiang ^a  

^a BEIJING INSTITUTE OF GRAPHIC COMMUNICATION   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN FILMS; AS-DEPOSITED FILMS; ATOMIC FORCE MICROSCOPE (AFM); CRYSTALLINITIES; DEPOSITION TEMPERATURES; DIRECT INTERACTIONS; DISCHARGE MODE; FOURIER TRANSFORM INFRARED; INTENSE EMISSION; LOW TEMPERATURES; MICROWAVE ELECTRON CYCLOTRON RESONANCE; MIXTURE GAS; OPTOELECTRONIC NANODEVICES; PHOTOLUMINESCENCE SPECTRUM; PLASMA ASSISTED ATOMIC LAYER DEPOSITIONS; POTENTIAL APPLICATIONS; PROCESS PARAMETERS; RADIO FREQUENCY DISCHARGES; RF DISCHARGE; TRIMETHYL ALUMINUMS; X-RAY PHOTOELECTRON SPECTROSCOPE;

ALUMINUM; ALUMINUM COATINGS; ATOMIC FORCE MICROSCOPY; ATOMIC LAYER DEPOSITION; CARBON FILMS; DEPOSITS; FILM PREPARATION; HYDROGEN; MAGNETIC FIELDS; NITROGEN; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; REFRACTIVE INDEX; SPECTROSCOPIC ELLIPSOMETRY; SURFACE ROUGHNESS; TEMPERATURE; X RAY DIFFRACTION;

ALUMINUM NITRIDE;

EID: 84871858295     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.4764112     Document Type: Article

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