Capacitance characterization of tapered through-silicon-via considering MOS effect

Microelectronics Journal

Volumn 45, Issue 2, 2014, Pages 205-210

  Wang, Fengjuan ^a   Zhu, Zhangming ^a   Yang, Yintang ^a   Liu, Xiaoxian ^a   Ding, Ruixue ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

2D Poisson's equation; MOS effect; Parasitic capacitance; Tapered TSV (T TSV)

Indexed keywords

2D POISSON; ACCEPTOR CONCENTRATIONS; CLOSED-FORM EXPRESSION; METAL OXIDE SEMICONDUCTOR; MOS EFFECT; PARASITIC CAPACITANCE; TAPERED TSV (T-TSV); THROUGH-SILICON-VIA;

MOS DEVICES; POISSON EQUATION;

CAPACITANCE;

EID: 84893772949     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2013.10.015     Document Type: Article

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