Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

2010 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2010

Volumn , Issue , 2010, Pages

  Zhao, Wen Sheng ^a   Wang, Xiao Peng ^a   Xu, Xiao Long ^b   Yin, Wen Yan ^a,b  

^a ZHEJIANG UNIVERSITY   (China)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE EXTRACTION; CIRCUIT MODELS; ELECTRO-THERMAL MODELING; LUMPED-ELEMENT CIRCUIT MODEL; PARTIAL-ELEMENT EQUIVALENT-CIRCUIT METHODS; SILICON MATERIALS; TEMPERATURE DEPENDENT; THROUGH-SILICON-VIA; TRANSMISSION CHARACTERISTICS; TRANSMISSION LINE;

CIRCUIT THEORY; DESIGN; PACKAGING;

THREE DIMENSIONAL;

EID: 79851486630     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDAPS.2010.5683012     Document Type: Conference Paper

References (8)

1. G. Katti, M. Stucchi, K. D. Meyer, and W. Dehaene, "Electrical modeling and characterization of through silicon via for three-dimensional ICs," IEEE Trans. Electron Dev., vol. 57, no. 1, pp. 256-262, Jan. 2010.
2. X. P. Wang, W. Y. Yin, and S. He, "Multiphysics characterization of transient electrothermaomechanical reponses of through-silicon vias applied with a periodic voltage pulse," IEEE Trans. Electron Dev., vol. 57, no. 4, June 2010.
3. T. G. Sparks, S. M. Alam, R. Chatterjee, and S. Rauf, "Method of forming a through-substrate via," U.S. Patent Appl. 20080113505, Nov. 2006.
4. T. Bandyopadhyay, R. Chatterjee, D. Chung, M. Swaminathan, and R. Tummala, "Electrical modeling of annular and co-axial TSVs considering MOS capacitance effects," IEEE Conf. EPEPS, pp. 117-120, Oct. 2009.
5. F. T. Ulaby, Fundamentals of Applied Electromagnetics, Ch. 2, Prentice Hall, New Jersey, 1999.
6. K. Yang, W. Y. Yin, J. Shi, K. Kang, J. F. Mao, and Y. P. Zhang, "A study of on-chip spiral inductors," IEEE Trans. Electron Devices,vol.55, no.11, pp. 3236-3245, Nov. 2008.
7. N. Arora, Ed., MOSFET Modeling for VLSI Circuit Simulation Theory and Pratice, New York: Springer-Verlag, 1993.
8. J. Krupka, J. Breeze, A. Centeno, N. Alfard, T. Claussen, and L. Jensen, "Measurement of permittivity, dielectric loss tangent, and resitivity of float-zone silicon at microwave frequencies," IEEE Trans. Microw. Theory Tech., vol.55, no.11, pp.3995-4001, Nov. 2006.