Compact AC modeling and analysis of Cu, W, and CNT based through-silicon vias (TSVs) in 3-D ICs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Xu, Chuan ^a   Li, Hong ^a   Suaya, Roberto ^b   Banerjee, Kaustav ^a  

^a University of California   (United States)

^b MENTOR GRAPHICS CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3-D ICS; AC CONDUCTION; AC MODELING; BUNDLE STRUCTURES; COMPACT MODEL; COMPARATIVE PERFORMANCE ANALYSIS; EFFECTIVE RESISTIVITY; ELECTROMAGNETIC SIMULATION; HIGH FREQUENCY HF; MULTI-WALLED; SILICON SUBSTRATES; SINGLE-WALLED; THERMAL STABILITY; THROUGH SILICON VIAS;

CARBON NANOTUBES; DIELECTRIC MATERIALS; EDDY CURRENTS; ELECTRON DEVICES; SEMICONDUCTING SILICON; THERMOGRAVIMETRIC ANALYSIS;

THREE DIMENSIONAL;

EID: 77952342642     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424307     Document Type: Conference Paper

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