High-frequency scalable electrical model and analysis of a through silicon via (TSV)

IEEE Transactions on Components, Packaging and Manufacturing Technology

Volumn 1, Issue 2, 2011, Pages 181-195

  Kim, Joohee ^a   Pak, Jun So ^a   Cho, Jonghyun ^a   Song, Eakhwan ^a   Cho, Jeonghyeon ^a   Kim, Heegon ^a   Song, Taigon ^b   Lee, Junho ^c   Lee, Hyungdong ^c   Park, Kunwoo ^c   Yang, Seungtaek ^c   Suh, Min Suk ^c   Byun, Kwang Yoo ^c   Kim, Joungho ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c Hynix Semiconductor Inc   (South Korea)

Author keywords

Scalable model; three dimensional (3 D) integrated circuit (IC); through silicon via (TSV); TSV channel

Indexed keywords

3-D INTEGRATED CIRCUIT DESIGNS; ANALYTIC EQUATIONS; ELECTRICAL BEHAVIORS; FREQUENCY-DEPENDENT LOSS; REDISTRIBUTION LAYERS; SCALABLE MODEL; THROUGH-SILICON-VIA (TSV); TSV CHANNEL;

FREQUENCY DOMAIN ANALYSIS; INTEGRATED CIRCUITS; LARGE SCALE SYSTEMS; THREE DIMENSIONAL COMPUTER GRAPHICS;

THREE DIMENSIONAL;

EID: 79960901040     PISSN: 21563950     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCPMT.2010.2101890     Document Type: Article

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