|
Volumn 22, Issue 6, 2012, Pages 303-305
|
A new model for through-silicon vias on 3-D IC using conformal mapping method
|
Author keywords
3 D integrated circuits; Conformal mapping; equivalent circuit model; through silicon via (TSV)
|
Indexed keywords
3-D INTEGRATED CIRCUIT;
CLOSED-FORM FORMULAE;
CONFORMAL MAPPING METHOD;
CONFORMAL MAPPING TECHNIQUE;
ELECTRICAL PERFORMANCE;
EQUIVALENT CIRCUIT MODEL;
FULL-WAVE SIMULATIONS;
GEOMETRICAL PARAMETERS;
NEW MODEL;
PARALLEL CAPACITANCE;
PITCH-TO-DIAMETER RATIOS;
PROXIMITY EFFECTS;
RESISTANCE AND INDUCTANCE;
THROUGH SILICON VIAS;
THROUGH-SILICON VIA (TSV);
CONFORMAL MAPPING;
ELECTRONICS PACKAGING;
THREE DIMENSIONAL;
|
EID: 84862019957
PISSN: 15311309
EISSN: None
Source Type: Journal
DOI: 10.1109/LMWC.2012.2195776 Document Type: Article |
Times cited : (41)
|
References (7)
|