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Volumn 22, Issue 6, 2012, Pages 303-305

A new model for through-silicon vias on 3-D IC using conformal mapping method

Author keywords

3 D integrated circuits; Conformal mapping; equivalent circuit model; through silicon via (TSV)

Indexed keywords

3-D INTEGRATED CIRCUIT; CLOSED-FORM FORMULAE; CONFORMAL MAPPING METHOD; CONFORMAL MAPPING TECHNIQUE; ELECTRICAL PERFORMANCE; EQUIVALENT CIRCUIT MODEL; FULL-WAVE SIMULATIONS; GEOMETRICAL PARAMETERS; NEW MODEL; PARALLEL CAPACITANCE; PITCH-TO-DIAMETER RATIOS; PROXIMITY EFFECTS; RESISTANCE AND INDUCTANCE; THROUGH SILICON VIAS; THROUGH-SILICON VIA (TSV);

EID: 84862019957     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2012.2195776     Document Type: Article
Times cited : (41)

References (7)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.