Characterization of in situ SiNx thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor deposition

Applied Physics Letters

Volumn 104, Issue 3, 2014, Pages

  Lu, Xing ^a   Ma, Jun ^a   Jiang, Huaxing ^a   May Lau, Kei ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ALN/GAN; BREAKDOWN FIELD; EFFECTIVE DIELECTRIC CONSTANTS; FREQUENCY-DEPENDENT CONDUCTANCE; INTERFACE TRAPPING; METAL-ORGANIC;

GATE DIELECTRICS; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; VAPORS;

SILICON NITRIDE;

EID: 84893419476     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4862664     Document Type: Article

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