Enhancement-mode AlN/GaN MOSHFETs on Si substrate with regrown source/drain by MOCVD

IEEE Electron Device Letters

Volumn 33, Issue 8, 2012, Pages 1123-1125

  Huang, Tongde ^a   Zhu, Xueliang ^a   Lau, Kei May ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

AlN GaN; Atomic layer deposited (ALD) Al 2O 3; enhancement mode (E mode); metal oxide semiconductor high electron mobility transistor (MOS HEMT)

Indexed keywords

ACCESS RESISTANCE; ALN/GAN; ATOMIC LAYER DEPOSITED; DEVICE PERFORMANCE; ENHANCEMENT-MODE; GATE-LEAKAGE CURRENT; MAXIMUM DRAIN CURRENT; METAL-OXIDE; METAL-OXIDE-SEMICONDUCTOR HIGH-ELECTRON MOBILITY TRANSISTORS; MOS-HFETS; ON-RESISTANCE; PEAK TRANSCONDUCTANCE; REGROWTH INTERFACES; SEMICONDUCTOR HETEROJUNCTIONS; SI SUBSTRATES;

ALUMINUM; ATOMIC LAYER DEPOSITION; DIELECTRIC DEVICES; GATE DIELECTRICS; HETEROJUNCTIONS; MOS DEVICES; OHMIC CONTACTS; SEMICONDUCTING SILICON; SILICON; SUBSTRATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84864469074     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2198911     Document Type: Article

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