AlN/GaN insulated gate HEMTs with HfO2 gate dielectric

Electronics Letters

Volumn 45, Issue 8, 2009, Pages 423-424

  Deen, D A ^a   Binari, S C ^a   Storm, D F ^a   Katzer, D S ^a   Roussos, J A ^a   Hackley, J C ^b   Gougousi, T ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF MARYLAND BALTIMORE COUNTY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYERS; DC TRANSFERS; GAIN CUTOFF FREQUENCIES; GATE CURRENTS; GATE LENGTHS; HIGH - K DIELECTRICS; INSULATED GATES; MAXIMUM DRAIN CURRENTS; PINCH OFFS;

ALUMINA; CRYSTAL GROWTH; CUTOFF FREQUENCY; DRAIN CURRENT; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HETEROJUNCTIONS; MOLECULAR BEAMS; MOLECULAR DYNAMICS;

DIELECTRIC MATERIALS;

EID: 64549122025     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2009.3688     Document Type: Article

References (9)

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