Effect of dielectric thickness on power performance of AlGaN/GaN HEMTs

IEEE Electron Device Letters

Volumn 30, Issue 4, 2009, Pages 313-315

  Pei, Yi ^a   Rajan, Siddharth ^a,b   Higashiwaki, Masataka ^a   Chen, Zhen ^a   DenBaars, Steven P ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

^b The Ohio State University   (United States)

Author keywords

Dielectric; Gallium nitride; High electronmobility transistors (HEMTs); Passivation; Power; Power added Efficiency (PAE)

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; DIELECTRIC; DIELECTRIC CAPACITANCES; DIELECTRIC THICKNESS; HIGH-ELECTRONMOBILITY TRANSISTORS (HEMTS); PASSIVATION METHODS; POWER; POWER PERFORMANCE; POWER-ADDED EFFICIENCY (PAE); RF DISPERSIONS;

GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING GALLIUM; SILICON NITRIDE;

PASSIVATION;

EID: 66749161510     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2012444     Document Type: Article

References (17)

1. B. M. Green, K. K. Chu, E. M. Chumbes, J. A. Smart, J. R. Shealy, and L. F. Eastman, "The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs," IEEE Electron Device Lett., vol. 21, no. 6, pp. 268-270, Jun. 2000.
2. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, "The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs," IEEE Trans. Electron Devices, vol. 48, no. 3, pp. 560-566, Mar. 2001.
3. 4 and silicon oxynitride," Appl. Phys. Lett., vol. 84, no. 4, pp. 613-615, Jan. 2004.
4. N. A. Moser, J. K. Gillespie, G. D. Via, A. Crespo, M. J. Yannuzzi, G. H. Jessen, R. C. Fitch, B. Luo, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, and S. J. Pearton, "Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors," Appl. Phys. Lett., vol. 83, no. 20, pp. 4178-4180, Nov. 2003.
5. B. P. Gila, M. Hlad, A. H. Onstine, R. Frazier, G. T. Thaler, A. Herrero, E. Lambers, C. R. Abernathy, S. J. Pearton, T. Anderson, S. Jang, F. Ren, N. Moser, R. C. Fitch, and M. Freund, "Improved oxide passivation of AlGaN/GaN high electron mobility transistors," Appl. Phys. Lett., vol. 87, no. 16, p. 163 503, Oct. 2005.
6. J. Hwang, W. J. Schaff, B. N. Green, H. Cha, and L. Eastman, "Effect of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors," Solid State Electron., vol. 48, no. 2, pp. 363-366, Feb. 2004.
7. Y. F. Wu, M. Moore, A. Saxler, T. Wisleder, and P. Parikh, "40-W/mm double field-plated GaN HEMTs," in Proc. 64th Device Res. Conf., 2006, pp. 151-152.
8. Y. Pei, R. Chu, L. Shen, N. A. Fichtenbaum, Z. Chen, D. Brown, S. Keller, S. P. Denbaars, and U. K. Mishra, "Recessed slant gate AlGaN/ GaN high electron mobility transistors with 20.9 W/mm at 10 GHz," Jpn. J. Appl. Phys., vol. 46, no. 45, pp. L1 087-L1 089, 2007.
9. Y. F. Wu, M. Moore, A. Abrahamsen, M. J. Mitos, P. Parikh, S. Heikman, and A. Burk, "High voltage millimeter-wave GaN HEMTs with 13.7 W/mm power density," in IEDM Tech. Dig., 2007, pp. 405-407.
10. T. Palacios, A. Chakraborty, S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, "AlGaN/GaN high electron mobility transistors with InGaN back-barriers," IEEE Electron Device Lett., vol. 27, no. 1, pp. 13-15, Jan. 2006.
11. Y. Pei, M. Higashiwaki, U. K. Mishra, and S. Rajan, "Gallium Nitride Transistor in a Vacuum Package," Provisional patent application, Docket 30794.286-US-P1.
12. M. Higashiwaki, T. Mimura, and T. Matsui, "AlGaN/GaN heterostructure field-effect transistor on 4H-SiC substrates with current-gain cutoff frequency of 190 GHz," Appl. Phys. Exp., vol. 1, no. 2, p. 021 103, 2008.
13. T. Palacios, E. Snow, Y. Pei, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra, "Ge-spacer technology in AlGaN/GaN HEMTs for mm-wave applications," in IEDM Tech. Dig., 2005, p. 32.7.
14. Z. Chen, Y. Pei, S. Newman, R. Chu, D. Brown, R. Chung, S. Keller, S. P. Denbaars, S. Nakamura, and U. K. Mishra, Growth of AlGaN/GaN heterojunction field effect transistor on semi-insulating GaN facilitated by an AlGaN inserlayer. submitted to APL for publication.
15. Y. Pei, R. Chu, L. Shen, N. A. Fichtenbaum, Z. Chen, D. Brown, S. Keller, S. P. Denbaars, and U. K. Mishra, "Effect of Al composition and gate recess on power performance of AlGaN/GaN high-electron mobility transistors," IEEE Electron Device Lett., vol. 29, no. 4, pp. 300-302, Apr. 2008.
16. B. M. Green, V. S. Kaper, V. Tilak, J. R. Shealy, and L. F. Eastman, "Dynamic load line analysis of AlGaN/GaN HEMTs," in Proc. High Performance Devices, Lester Conf., 2002, pp. 443-452.
17. S. Rajan, A. Chakraborty, C. Poblenz, P. Waltereit, J. S. Speck, and U. K. Mishra, "MBE-grown AlGaN/GaN HEMTs on SiC," Int. J. High Speed Electron. Syst., vol. 14, no. 3, pp. 732-737, 2004.