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Volumn 96, Issue 1, 2010, Pages

Trapping effects in Al 2 O 3 /AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurements

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; CONDUCTANCE MEASUREMENT; ENERGY RANGES; FREQUENCY-DEPENDENT CONDUCTANCE; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; INCREASED TEMPERATURE; METAL OXIDE SEMICONDUCTOR; ROOM TEMPERATURE; TEMPERATURE DEPENDENT; TIME CONSTANTS; TRAP STATE; TRAPPING EFFECTS;

EID: 75749090769     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3275754     Document Type: Article
Times cited : (39)

References (13)
  • 3
    • 33646754259 scopus 로고    scopus 로고
    • JECMA5 0361-5235. 10.1007/s11664-006-0129-6
    • W. Huang, T. Khan, and T. P. Chow, J. Electron. Mater. JECMA5 0361-5235 35, 726 (2006). 10.1007/s11664-006-0129-6
    • (2006) J. Electron. Mater. , vol.35 , pp. 726
    • Huang, W.1    Khan, T.2    Chow, T.P.3
  • 4
    • 34047260562 scopus 로고    scopus 로고
    • 3/GaN metal-oxide-semiconductor structures
    • DOI 10.1063/1.2719228
    • Y. Q. Wu, T. Shen, P. D. Ye, and G. D. Wilk, Appl. Phys. Lett. APPLAB 0003-6951 90, 143504 (2007). 10.1063/1.2719228 (Pubitemid 46550157)
    • (2007) Applied Physics Letters , vol.90 , Issue.14 , pp. 143504
    • Wu, Y.Q.1    Shen, T.2    Ye, P.D.3    Wilk, G.D.4
  • 8
    • 70349651755 scopus 로고    scopus 로고
    • JAPIAU 0021-8979. 10.1063/1.3224852
    • B. L. Swenson and U. K. Mishra, J. Appl. Phys. JAPIAU 0021-8979 106, 064902 (2009). 10.1063/1.3224852
    • (2009) J. Appl. Phys. , vol.106 , pp. 064902
    • Swenson, B.L.1    Mishra, U.K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.