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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 5, 2009, Pages 2079-2083

Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures

(7) Cho, E a Seo, S a Jin, C a Pavlidis, D a Fu, G a Tuerck, J a Jaegermann, W a

a DARMSTADT UNIVERSITY OF TECHNOLOGY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AIR EXPOSURE; ALN; CAPACITANCE VOLTAGE MEASUREMENTS; DC AND RF CHARACTERISTICS; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL CHARACTERISTIC; HETEROSTRUCTURES; IN-SITU; METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; METAL-ORGANIC VAPOR PHASE EPITAXY; OPTICAL CHARACTERISTICS; PASSIVATION LAYER; PHOTOLUMINESCENCE MEASUREMENTS; PLASMA TREATMENT; TRANSMISSION-LINE MEASUREMENTS; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

CRYSTAL GROWTH; ELECTRIC PROPERTIES; ELECTRON GAS; FIELD EFFECT TRANSISTORS; LIGHT TRANSMISSION; METAL INSULATOR BOUNDARIES; METALS; MIS DEVICES; MISFET DEVICES; OPTICAL PROPERTIES; ORGANOMETALLICS; PASSIVATION; PLASMA APPLICATIONS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR GROWTH; SILANES; SILICON NITRIDE; TWO DIMENSIONAL ELECTRON GAS; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 70349659947 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3186615 Document Type: Article

Times cited : (13)

References (18)

1
- 33748483638
- AlN/GaN insulated-gate HFETs using Cat-CVD SiN
- DOI 10.1109/LED.2006.881087
- M. Higashiwaki, T. Mimura, and Toshiaki Matshui, IEEE Electron Device Lett. 0741-3106 27, 719 (2006). 10.1109/LED.2006.881087 (Pubitemid 44355886)
- (2006) IEEE Electron Device Letters , vol.27 , Issue.9 , pp. 719-721
- Higashiwaki, M.¹ Mimura, T.² Matsui, T.³

2
- 0033221741
- Low interface state density AlN/GaN MISFETs
- DOI 10.1049/el:19991407
- E. Alekseev, A. Eisenbach, and D. Pavlidis, Electron. Lett. 0013-5194 35, 2145 (1999). 10.1049/el:19991407 (Pubitemid 32082241)
- (1999) Electronics Letters , vol.35 , Issue.24 , pp. 2145-2146
- Alekseev, E.¹ Eisenbach, A.² Pavlidis, D.³

3
- 34247846340
- High-mobility window for two-dimensional electron gases at ultrathin AlNGaN heterojunctions
- DOI 10.1063/1.2736207
- Yu. Cao and D. Jena, Appl. Phys. Lett. 0003-6951 90, 182112 (2007). 10.1063/1.2736207 (Pubitemid 46701175)
- (2007) Applied Physics Letters , vol.90 , Issue.18 , pp. 182112
- Cao, Y.¹ Jena, D.²

4
- 0033738001
- Effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's
- DOI 10.1109/55.843146
- B. M. Green, K. K. Chu, E. M. Chumbes, J. A. Smart, J. R. Shealy, and L. F. Eastman, IEEE Electron Device Lett. 0741-3106 21, 268 (2000). 10.1109/55.843146 (Pubitemid 30866258)
- (2000) IEEE Electron Device Letters , vol.21 , Issue.6 , pp. 268-270
- Green, B.M.¹ Chu, K.K.² Chumbes, E.M.³ Smart, J.A.⁴ Shealy, J.R.⁵ Eastman, L.F.⁶

5
- 0037370339
- 0022-0248,. 10.1016/S0022-0248(02)02187-5
- J. R. Shealy, T. R. Prunty, E. M. Chumbes, and B. K. Ridley, J. Cryst. Growth 0022-0248 250, 7 (2003). 10.1016/S0022-0248(02)02187-5
- (2003) J. Cryst. Growth , vol.250 , pp. 7
- Shealy, J.R.¹ Prunty, T.R.² Chumbes, E.M.³ Ridley, B.K.⁴

6
- 0141569703
- 1071-1023,. 10.1116/1.1585077
- T. Hashizume, S. Ootomo, T. Inagaki, and H. Hasegawa, J. Vac. Sci. Technol. B 1071-1023 21, 1828 (2003). 10.1116/1.1585077
- (2003) J. Vac. Sci. Technol. B , vol.21 , pp. 1828
- Hashizume, T.¹ Ootomo, S.² Inagaki, T.³ Hasegawa, H.⁴

7
- 33747345636
- Effects of SiN passivation by catalytic chemical vapor deposition on electrical properties of AIGaN/GaN heterostructure field-effect transistors
- DOI 10.1063/1.2218759
- M. Higashiwaki, T. Mimura, and Toshiaki Matshui, J. Appl. Phys. 0021-8979 100, 033714 (2006). 10.1063/1.2218759 (Pubitemid 44244718)
- (2006) Journal of Applied Physics , vol.100 , Issue.3 , pp. 033714
- Higashiwaki, M.¹ Onojima, N.² Matsui, T.³ Mimura, T.⁴

8
- 34547616282
- In situ SiN passivation of AlGaN/GaN HEMTs by molecular beam epitaxy
- DOI 10.1049/el:20071211
- B. Heying, Electron. Lett. 0013-5194 43, 779 (2007). 10.1049/el:20071211 (Pubitemid 47203048)
- (2007) Electronics Letters , vol.43 , Issue.14 , pp. 779-780
- Heying, B.¹ Smorchkova, I.P.² Coffie, R.³ Gambin, V.⁴ Chen, Y.C.⁵ Sutton, W.⁶ Lam, T.⁷ Kahr, M.S.⁸ Sikorski, K.S.⁹ Wojtowicz, M.¹⁰

9
- 25144487113
- 4 surface layer
- DOI 10.1063/1.2008388, 054501
- J. Derluyn, S. Boeykens, K. Cheng, R. Vandersmissen, S. Degroote, M. R. Leys, M. Germain, and G. Borghs, J. Appl. Phys. 0021-8979 98, 054501 (2005). 10.1063/1.2008388 (Pubitemid 41345124)
- (2005) Journal of Applied Physics , vol.98 , Issue.5 , pp. 1-5
- Derluyn, J.¹ Boeykens, S.² Cheng, K.³ Vandersmissen, R.⁴ Das, J.⁵ Ruythooren, W.⁶ Degroote, S.⁷ Leys, M.R.⁸ Germain, M.⁹ Borghs, G.¹⁰

10
- 0026403835
- 0272-4324,. 10.1007/BF01447159
- S. E. Hicks and R. A. G. Gibson, Plasma Chem. Plasma Process. 0272-4324 11, 455 (1991). 10.1007/BF01447159
- (1991) Plasma Chem. Plasma Process. , vol.11 , pp. 455
- Hicks, S.E.¹ Gibson, R.A.G.²

11
- 0141792945
- 1071-1023,. 10.1116/1.1589520
- H. Hasegawa, T. Inagaki, S. Ootomo, and T. Hashizume, J. Vac. Sci. Technol. B 1071-1023 21, 1844 (2003). 10.1116/1.1589520
- (2003) J. Vac. Sci. Technol. B , vol.21 , pp. 1844
- Hasegawa, H.¹ Inagaki, T.² Ootomo, S.³ Hashizume, T.⁴

12
- 0032289845
- 0038-1101,. 10.1016/S0038-1101(98)00224-X
- R. J. Shul, C. G. Willison, M. M. Bridges, J. Han, J. W. Lee, S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, and S. M. Donovan, Solid-State Electron. 0038-1101 42, 2269 (1998). 10.1016/S0038-1101(98)00224-X
- (1998) Solid-State Electron. , vol.42 , pp. 2269
- Shul, R.J.¹ Willison, C.G.² Bridges, M.M.³ Han, J.⁴ Lee, J.W.⁵ Pearton, S.J.⁶ Abernathy, C.R.⁷ MacKenzie, J.D.⁸ Donovan, S.M.⁹

13
- 51449085804
- 0042-207X,. 10.1016/j.vacuum.2008.07.007
- D. Chen, D. Xu, J. Wang, B. Zhao, and Y. Zhang, Vacuum 0042-207X 83, 282 (2008). 10.1016/j.vacuum.2008.07.007
- (2008) Vacuum , vol.83 , pp. 282
- Chen, D.¹ Xu, D.² Wang, J.³ Zhao, B.⁴ Zhang, Y.⁵

14
- 85008060433
- 0741-3106,. 10.1109/LED.2007.891281
- D. Song, J. Liu, Z. Cheng, W. C. W. Tang, K. M. Lau, and K. J. Chen, IEEE Electron Device Lett. 0741-3106 28, 189 (2007). 10.1109/LED.2007.891281
- (2007) IEEE Electron Device Lett. , vol.28 , pp. 189
- Song, D.¹ Liu, J.² Cheng, Z.³ Tang, W.C.W.⁴ Lau, K.M.⁵ Chen, K.J.⁶

15
- 55649097766
- 0169-4332,. 10.1016/j.apsusc.2008.07.016
- T. Lalinsk, L. Rufer, G. Vanko, S. Mir, Š. Hašč ík, Ž. Mozolová, A. Vincze, and F. Uherek, Appl. Surf. Sci. 0169-4332 255, 712 (2008). 10.1016/j.apsusc.2008.07.016
- (2008) Appl. Surf. Sci. , vol.255 , pp. 712
- Lalinsk, T.¹ Rufer, L.² Vanko, G.³ Mir, S.⁴ Hašči⁵ ́k, Š.⁶ Mozolová, Ž.⁷ Vincze, A.⁸ Uherek, F.⁹

16
- 79956003382
- A study of subbands in AlGaN/GaN high-electron-mobility transistor structures using low-temperature photoluminescence spectroscopy
- DOI 10.1063/1.1485310
- C. Y. Fang, C. F. Lin, E. Y. Chang, and M. S. Feng, Appl. Phys. Lett. 0003-6951 80, 4558 (2002). 10.1063/1.1485310 (Pubitemid 34751405)
- (2002) Applied Physics Letters , vol.80 , Issue.24 , pp. 4558
- Fang, C.Y.¹ Lin, C.F.² Chang, E.Y.³ Feng, M.S.⁴

17
- 0035911429
- 0003-6951,. 10.1063/1.1353836
- C. W. Teng, M. O. Aboelfotoh, R. F. Davis, J. F. Muth, and R. M. Kolbas, Appl. Phys. Lett. 0003-6951 78, 1688 (2001). 10.1063/1.1353836
- (2001) Appl. Phys. Lett. , vol.78 , pp. 1688
- Teng, C.W.¹ Aboelfotoh, M.O.² Davis, R.F.³ Muth, J.F.⁴ Kolbas, R.M.⁵

18
- 0001440733
- 0003-6951,. 10.1063/1.125150
- H. K. Kwon, C. J. Eiting, D. J. H. Lambert, B. S. Shelton, M. M. Wong, T. -G. Zhu, and R. D. Dupius, Appl. Phys. Lett. 0003-6951 75, 2788 (1999). 10.1063/1.125150
- (1999) Appl. Phys. Lett. , vol.75 , pp. 2788
- Kwon, H.K.¹ Eiting, C.J.² Lambert, D.J.H.³ Shelton, B.S.⁴ Wong, M.M.⁵ Zhu, T.-G.⁶ Dupius, R.D.⁷

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