Evolution of epitaxial graphene layers on 3C SiC/Si (1 1 1) as a function of annealing temperature in UHV

Carbon

Volumn 68, Issue , 2014, Pages 563-572

  Gupta, B ^a   Notarianni, M ^a   Mishra, N ^b   Shafiei, M ^a   Iacopi, F ^b   Motta, N ^a  

^a QUEENSLAND UNIVERSITY OF TECHNOLOGY   (Australia)

^b GRIFFITH UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ELECTRONIC DEVICE; EPITAXIAL GRAPHENE; EXPONENTIAL DEPENDENCE; GRAPHENE LAYERS; HIGH-TEMPERATURE ANNEALING; RAMAN SPECTROSCOPY MEASUREMENTS; SURFACE CHARACTERIZATION; IN-SITU STUDY;

ANNEALING; EPITAXIAL GROWTH; PHOTOELECTRONS; SCANNING TUNNELING MICROSCOPY; SILICON; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY; COST REDUCTION;

GRAPHENE;

EID: 84891555108     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2013.11.035     Document Type: Article

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