Growth of 3C-SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °c

Thin Solid Films

Volumn 519, Issue 19, 2011, Pages 6443-6446

  Wang, Li ^a   Dimitrijev, Sima ^a   Han, Jisheng ^a   Iacopi, Alan ^a   Hold, Leonie ^a   Tanner, Philip ^a   Harrison, H Barry ^a  

^a GRIFFITH UNIVERSITY   (Australia)

Author keywords

Alternating supply epitaxy; Low pressure chemical vapor deposition; Silicon carbide; X ray diffraction

Indexed keywords

ALTERNATING SUPPLY EPITAXY; DEPOSITION TEMPERATURES; EPITAXIALLY GROWN; FILM QUALITY; INDUCED STRESS; MICROSTRUCTURE ANALYSIS; N-TYPE CONDUCTIVITY; NONUNIFORMITY; SI (100) SUBSTRATE; SI SUBSTRATES; SI WAFER; SI(1 0 0); SIC FILMS; SINGLE-CRYSTALLINE 3C-SIC; THERMAL MISMATCH; THIN OXIDE LAYERS;

ACETYLENE; CARBONIZATION; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; SILICA; SILICON; SILICON CARBIDE; SILICON WAFERS; SUBSTRATES; X RAY DIFFRACTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79958242680     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.04.224     Document Type: Article

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