Bottom-up growth of epitaxial graphene on 6H-SiC(0001)

ACS Nano

Volumn 2, Issue 12, 2008, Pages 2513-2518

  Huang, Han ^a   Chen, Wei ^a   Chen, Shi ^a   Wee, Andrew Thye Shen ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Bottom up growth; Epitaxial graphene; Interfacial graphene; Scanning tunneling microscopy; Silicon carbide

Indexed keywords

DECOMPOSITION; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; PYROLYSIS; SCANNING; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; TUNNELING (EXCAVATION);

BI LAYERS; BOTTOM-UP GROWTH; CARBON ATOMS; EPITAXIAL GRAPHENE; GROWTH MECHANISMS; IN-SITU; INTERFACIAL GRAPHENE; LOW TEMPERATURES; STM IMAGES; THERMAL DECOMPOSITIONS; TRILAYER;

SEMICONDUCTING SILICON COMPOUNDS;

GRAPHITE; INORGANIC COMPOUND; NANOMATERIAL; SILICON CARBIDE; SILICON DERIVATIVE;

ARTICLE; CHEMISTRY; NANOTECHNOLOGY; SCANNING TUNNELING MICROSCOPY;

CARBON COMPOUNDS, INORGANIC; GRAPHITE; MICROSCOPY, SCANNING TUNNELING; NANOSTRUCTURES; NANOTECHNOLOGY; SILICON COMPOUNDS;

EID: 58149147153     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn800711v     Document Type: Article

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