Low-energy-electron-diffraction and x-ray-phototelectron-spectroscopy studies of graphitization of 3C-SiC(111) thin film on Si(111) substrate

Japanese Journal of Applied Physics

Volumn 50, Issue 7 PART 1, 2011, Pages

  Takahashi, Ryota ^a   Handa, Hiroyuki ^a   Abe, Shunsuke ^a   Imaizumi, Kei ^a   Fukidome, Hirokazu ^a   Yoshigoe, Akitaka ^b   Teraoka, Yuden ^b   Suemitsu, Maki ^a,c  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

3C-SIC FILMS; C 1S CORE LEVEL; EPITAXIAL GRAPHENE; GRAPHITIZATION PROCESS; SI(111) SUBSTRATE; SILICON SUBSTRATES;

DIFFRACTION; EPITAXIAL GROWTH; GRAPHENE; GRAPHITE; GRAPHITIZATION; PHOTOELECTRON SPECTROSCOPY; SILICON; SILICON CARBIDE; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79960666911     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.070103     Document Type: Article

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