-
1
-
-
36149004075
-
Electron-hole recombination in germanium
-
R Hall Electron-hole recombination in germanium Phys Rev 87 1952 387
-
(1952)
Phys Rev
, vol.87
, pp. 387
-
-
Hall, R.1
-
2
-
-
33748621800
-
Statistics of the recombinations of holes and electrons
-
W Shockley, and W Read Statistics of the recombinations of holes and electrons Phys Rev 87 1952 835 842
-
(1952)
Phys Rev
, vol.87
, pp. 835-842
-
-
Shockley, W.1
Read, W.2
-
4
-
-
84889673145
-
-
〈http://www.iea.orgâŒ
-
-
-
-
5
-
-
84889668476
-
-
(accessed on 7.9.2013)
-
〈http://www.enfsolar.com/directory/equipment/ cell-diffusion⌠(accessed on 7.9.2013).
-
-
-
-
6
-
-
84889649986
-
-
(accessed on 7.9.2013)
-
〈http://www.enfsolar.com/directory/equipment/ cell-coating-deposition⌠(accessed on 7.9.2013).
-
-
-
-
7
-
-
79954549804
-
J Kö hler, J Werner, Add-on laser tailored selective emitter solar cells
-
T Röder, S Eisele, P Grabitz, C Wagner, and G Kulushich J Kö hler, J Werner, Add-on laser tailored selective emitter solar cells Prog Photovoltaics Res Appl 18 2010 505 510
-
(2010)
Prog Photovoltaics Res Appl
, vol.18
, pp. 505-510
-
-
Röder, T.1
Eisele, S.2
Grabitz, P.3
Wagner, C.4
Kulushich, G.5
-
8
-
-
0032516662
-
Defects in semiconductors: Some fatal, some vital
-
HJ Queisser, and EE Haller Defects in semiconductors: some fatal, some vital Science 281 1998 945 950 (Pubitemid 28399236)
-
(1998)
Science
, vol.281
, Issue.5379
, pp. 945-950
-
-
Queisser, H.J.1
Haller, E.E.2
-
9
-
-
0000401785
-
Surface recombination measurements on III-V candidate materials for nanostructure light-emitting diodes
-
M Boroditsky, I Gontijo, M Jackson, R Vrijen, E Yablonovitch, and T. Krauss Surface recombination measurements on III-V candidate materials for nanostructure light-emitting diodes J Appl Phys 87 2000 3497
-
(2000)
J Appl Phys
, vol.87
, pp. 3497
-
-
Boroditsky, M.1
Gontijo, I.2
Jackson, M.3
Vrijen, R.4
Yablonovitch, E.5
Krauss, T.6
-
11
-
-
0034268858
-
Surface passivation of crystalline silicon solar cells: A review
-
DOI 10.1002/1099-159X(200009/10)8: 5<473::AID-PIP337>3.0.CO;2-D
-
A Aberle Surface passivation of crystalline silicon solar cells: a review Prog Photovoltaics Res Appl 8 2000 473 487 (Pubitemid 32018624)
-
(2000)
Progress in Photovoltaics: Research and Applications
, vol.8
, Issue.5
, pp. 473-487
-
-
Aberle, A.G.1
-
12
-
-
0024608092
-
Low-temperature surface passivation of silicon for solar cells
-
R Hezel, and K Jaeger Low-temperature surface passivation of silicon for solar cells J Electrochem Soc 136 1989 518
-
(1989)
J Electrochem Soc
, vol.136
, pp. 518
-
-
Hezel, R.1
Jaeger, K.2
-
13
-
-
36449002905
-
Record low surface recombination velocities on 1 cm p-silicon using remote plasma silicon nitride passivation
-
DOI 10.1063/1.115936, PII S0003695196025090
-
T Lauinger, J Schmidt, AG Aberle, and R Hezel Record low surface recombination velocities on 1ohm-cm p-silicon using remote plasma silicon nitride passivation Appl Phys Lett 68 1996 1232 1234 (Pubitemid 126684140)
-
(1996)
Applied Physics Letters
, vol.68
, Issue.9
, pp. 1232-1234
-
-
Lauinger, T.1
Schmidt, J.2
Aberle, A.G.3
Hezel, R.4
-
14
-
-
13544273595
-
Low temperature surface passivation for silicon solar cells
-
DOI 10.1016/0927-0248(95)00155-7
-
C Leguijt, P Lölgen, JA Eikelboom, AW Weeber, FM Schuurmans, and WC Sinke Low temperature surface passivation for silicon solar cells Sol Energy Mater Sol Cells 40 1996 297 345 (Pubitemid 126393316)
-
(1996)
Solar Energy Materials and Solar Cells
, vol.40
, Issue.4
, pp. 297-345
-
-
Leguijt, C.1
Lolgen, P.2
Eikelboom, J.A.3
Weeber, A.W.4
Schuurmans, F.M.5
Sinke, W.C.6
Alkemade, P.F.A.7
Sarro, P.M.8
Maree, C.H.M.9
Verhoef, L.A.10
-
15
-
-
0032640793
-
Optimised antireflection coatings for planar silicon solar cells using remote PECVD silicon nitride and porous silicon dioxide
-
H Nagel, A Aberle, and R Hezel Optimised antireflection coatings for planar silicon solar cells using remote PECVD silicon nitride and porous silicon dioxide Prog Photovoltaics Res Appl 17 1999 245 260
-
(1999)
Prog Photovoltaics Res Appl
, vol.17
, pp. 245-260
-
-
Nagel, H.1
Aberle, A.2
Hezel, R.3
-
17
-
-
0012746375
-
Minority carrier lifetimes of multicrystalline silicon during solar cell processing
-
30 June-4 July 1997. Barcelona, Spain
-
Stocks, M, Cuevas, A, Blakers, A. Minority carrier lifetimes of multicrystalline silicon during solar cell processing. In: Proceedings of the 14th European photovoltaic solar energy conference; 30 June-4 July 1997. Barcelona, Spain, pp. 770-773.
-
Proceedings of the 14th European Photovoltaic Solar Energy Conference
, pp. 770-773
-
-
Stocks, M.1
Cuevas, A.2
Blakers, A.3
-
20
-
-
0036605313
-
Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells
-
DOI 10.1002/pip.420
-
S Dauwe, L Mittelstädt, A Metz, and R Hezel Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells Prog Photovoltaics Res Appl 10 2002 271 278 (Pubitemid 34515871)
-
(2002)
Progress in Photovoltaics: Research and Applications
, vol.10
, Issue.4
, pp. 271-278
-
-
Dauwe, S.1
Mittelstadt, L.2
Metz, A.3
Hezel, R.4
-
22
-
-
46749130961
-
Thermal oxidation for crystalline silicon solar cells exceeding 19% efficiency applying industrially feasible process technology
-
O Schultz, A Mette, M Hermle, and S Glunz Thermal oxidation for crystalline silicon solar cells exceeding 19% efficiency applying industrially feasible process technology Prog Photovoltaics Res Appl 16 2008 317 324
-
(2008)
Prog Photovoltaics Res Appl
, vol.16
, pp. 317-324
-
-
Schultz, O.1
Mette, A.2
Hermle, M.3
Glunz, S.4
-
24
-
-
25144486603
-
Thermal oxidation processes for high-efficiency multicrystalline silicon solar cells
-
June 7-11 2004. Paris, France
-
Schultz, O, Glunz, S, Goldschmidt, J, Lautenschlager, H,Leimenstoll, A, Schneiderlöchner, E et al., Thermal oxidation processes for high-efficiency multicrystalline silicon solar cells. In: Proceedings of the 19th European photovoltaic solar energy conference; June 7-11 2004. Paris, France, pp. 604-607.
-
Proceedings of the 19th European Photovoltaic Solar Energy Conference
, pp. 604-607
-
-
Schultz, O.G.1
-
25
-
-
52449127963
-
Stack system of PECVD amorphous silicon and PECVD silicon oxide for silicon solar cell rear side passivation
-
M Hofmann, C Schmidt, N Kohn, J Rentsch, SW Glunz, and R Preu Stack system of PECVD amorphous silicon and PECVD silicon oxide for silicon solar cell rear side passivation Prog Photovoltaics Res Appl 16 2008 509 518
-
(2008)
Prog Photovoltaics Res Appl
, vol.16
, pp. 509-518
-
-
Hofmann, M.1
Schmidt, C.2
Kohn, N.3
Rentsch, J.4
Glunz, S.W.5
Preu, R.6
-
26
-
-
33750460407
-
Comparison of different dielectric passivation layers for application in industrially feasible high-efficiency crystalline silicon solar cells
-
6-10 June 2005. Barcelona, Spain
-
S Glunz, Grohe, A, Hermle, M, Hofmann, M, Janz, S, Roth, T, et al. Comparison of different dielectric passivation layers for application in industrially feasible high-efficiency crystalline silicon solar cells. In: Proceedings of the 20th European photovoltaic solar energy conference; 6-10 June 2005. Barcelona, Spain, pp. 572-577.
-
Proceedings of the 20th European Photovoltaic Solar Energy Conference
, pp. 572-577
-
-
Glunz, S.1
Grohe, A.2
Hermle, M.3
Hofmann, M.4
Janz, S.5
Roth, T.6
-
27
-
-
0012145571
-
Characterization of p-type c-Si surface passivation by n-doped a-SiCx:H films
-
22-26 October 2001. Munich, Germany
-
Martín, I, Vetter, M, Orpella, A, Voz, C, Puigdollers, J, Alcubilla, R. Characterization of p-type c-Si surface passivation by n-doped a-SiCx:H films. In: Proceedings of the 17th European photovoltaic solar energy conference; 22-26 October 2001. Munich, Germany, pp. 2954-2957.
-
Proceedings of the 17th European Photovoltaic Solar Energy Conference
, pp. 2954-2957
-
-
Martín, I.1
Vetter, M.2
Orpella, A.3
Voz, C.4
Puigdollers, J.5
Alcubilla, R.6
-
28
-
-
27744609122
-
Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface
-
R Ferre, I Martín, M Vetter, M Garín, and R Alcubilla Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface Appl Phys Lett 87 2005 202109 202111
-
(2005)
Appl Phys Lett
, vol.87
, pp. 202109-202111
-
-
Ferre, R.1
Martín, I.2
Vetter, M.3
Garín, M.4
Alcubilla, R.5
-
29
-
-
33645517067
-
Phosphorus-doped SiC as an excellent p-type Si surface passivation layer
-
S Janz, S Riepe, M Hofmann, S Reber, and S Glunz Phosphorus-doped SiC as an excellent p-type Si surface passivation layer Appl Phys Lett 88 2006 133516 133517
-
(2006)
Appl Phys Lett
, vol.88
, pp. 133516-133517
-
-
Janz, S.1
Riepe, S.2
Hofmann, M.3
Reber, S.4
Glunz, S.5
-
30
-
-
0035475390
-
x:H films
-
DOI 10.1063/1.1404406
-
I Martín, M Vetter, A Orpella, J Puigdollers, A Cuevas, and R Alcubilla Surface passivation of p-type crystalline Si by plasma enhanced chemical vapor deposited amorphous SiCx:H films Appl Phys Lett 79 2001 2199 2201 (Pubitemid 33600799)
-
(2001)
Applied Physics Letters
, vol.79
, Issue.14
, pp. 2199-2201
-
-
Martin, I.1
Vetter, M.2
Orpella, A.3
Puigdollers, J.4
Cuevas, A.5
Alcubilla, R.6
-
31
-
-
33749995746
-
N-Type emitter surface passivation in c-Si solar cells by means of antireflective amorphous silicon carbide layers
-
R Ferre R, I Martín, P Ortega, M Vetter, I Torres, and R Alcubilla n-Type emitter surface passivation in c-Si solar cells by means of antireflective amorphous silicon carbide layers J Appl Phys 100 2006 073703 073710
-
(2006)
J Appl Phys
, vol.100
, pp. 073703-073710
-
-
Ferre, R.R.1
Martín, I.2
Ortega, P.3
Vetter, M.4
Torres, I.5
Alcubilla, R.6
-
32
-
-
41049113108
-
y:H(n) alloys
-
DOI 10.1002/pip.802
-
R Ferre, A Orpella, D Munoz, I Martín, F Recart, and C Voz Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys Prog Photovoltaics Res Appl 16 2008 123 127 (Pubitemid 351651307)
-
(2008)
Progress in Photovoltaics: Research and Applications
, vol.16
, Issue.2
, pp. 123-127
-
-
Ferre, R.1
Orpella, A.2
Munoz, D.3
Martin, I.4
Recart, F.5
Voz, C.6
Puigdollers, J.7
Roca Cabarrocas, P.8
Alcubilla, R.9
-
33
-
-
78650090586
-
Enabling dielectric rear side passivtion for industrial mass production by developing lean printing based solar cell processes
-
June 20th-25th 2010. Honolulu, HI, USA
-
Lauermann, T, Lüder, T, Scholz, S, Raabe, B, Hahn, G, Terheiden, B. Enabling dielectric rear side passivtion for industrial mass production by developing lean printing based solar cell processes. In: Preprint 35th IEEE PVSC; June 20th-25th 2010. Honolulu, HI, USA.
-
35th IEEE PVSC
-
-
Lauermann, T.1
Lüder, T.2
Scholz, S.3
Raabe, B.4
Hahn, G.5
Terheiden, B.6
-
35
-
-
84889654156
-
Understanding the role of glass frit in the front Ag paste for high sheet resistance emitters
-
3-7 September 2007. Milan, Italy
-
Ebong, A, Rohatgi, A, Zhang, W, Neidert, M. Understanding the role of glass frit in the front Ag paste for high sheet resistance emitters. In: Proceedings of the 22nd EU PVSEC; 3-7 September 2007. Milan, Italy, pp. 1734.
-
Proceedings of the 22nd EU PVSEC
, pp. 1734
-
-
Ebong, A.1
Rohatgi, A.2
Zhang, W.3
Neidert, M.4
-
36
-
-
55649122861
-
Fine line printed silicon solar cells exceeding 20% efficiency
-
M Hörteis, and S Glunz Fine line printed silicon solar cells exceeding 20% efficiency Prog Photovoltaics Res Appl 16 2008 555 560
-
(2008)
Prog Photovoltaics Res Appl
, vol.16
, pp. 555-560
-
-
Hörteis, M.1
Glunz, S.2
-
37
-
-
78650162963
-
Detailed analysis of high sheet resistance emitters for selectively doped silicon solar cells
-
21-25 September 2009. Hamburg, Germany
-
Book, F, Dastgheib-Shirazi, A, Raabe, B, Haverkamp1, H, Hahn, G, Grabitz, P. Detailed analysis of high sheet resistance emitters for selectively doped silicon solar cells. In: Proceedings of the 24th EU PVSEC; 21-25 September 2009. Hamburg, Germany, pp. 1719-22.
-
Proceedings of the 24th EU PVSEC
, pp. 1719-1722
-
-
Book, F.1
Dastgheib-Shirazi, A.2
Raabe, B.3
Haverkampl, H.4
Hahn, G.5
Grabitz, P.6
-
38
-
-
84879712633
-
Minimizing the electrical losses at the front side: Development of a selective emitter process from a single diffusion
-
11-16 May 2008. San Diego, CA, USA
-
Haverkamp, H et al. Minimizing the electrical losses at the front side: development of a selective emitter process from a single diffusion. In: Preprint 33rd IEEE PVSC; 11-16 May 2008. San Diego, CA, USA.
-
Preprint 33rd IEEE PVSC
-
-
Haverkamp, H.1
-
39
-
-
84866138205
-
The development of etch-back processes for industrial silicon solar cells
-
6-10 September 2010. Valencia, Spain
-
Raabe, B, Book, F, Dastgheib-Shirazi, A, Hahn, G. The development of etch-back processes for industrial silicon solar cells. In: Proceedings of the 25th European photovoltaic solar energy conference and exhibition/5th world conference on photovoltaic energy conversion; 6-10 September 2010. Valencia, Spain, pp. 1174-78.
-
Proceedings of the 25th European Photovoltaic Solar Energy Conference and exhibition/5th World Conference on Photovoltaic Energy Conversion
, pp. 1174-1178
-
-
Raabe, B.1
Book, F.2
Dastgheib-Shirazi, A.3
Hahn, G.4
-
40
-
-
78650090511
-
NSECT: An inline selective emitter concept with high efficiencies at competitive process costs improved with inkjet masking technology
-
21-25 September 2009. Hamburg, Germany
-
Lauermann, T, Dastgheib-Shirazi, A, Book, F, Raabe, B, Hahn, G, Haverkamp, H, et al. INSECT: an inline selective emitter concept with high efficiencies at competitive process costs improved with inkjet masking technology. In: 24th European photovoltaic solar energy conference; 21-25 September 2009. Hamburg, Germany, pp. 1767-70.
-
24th European Photovoltaic Solar Energy Conference
, pp. 1767-1770
-
-
Lauermann, T.1
Dastgheib-Shirazi, A.2
Book, F.3
Raabe, B.4
Hahn, G.5
Haverkamp, H.6
-
41
-
-
78650146136
-
Selective emitter for industrial solar cell production: A wet chemical approach using a single side diffusion process
-
1-5 September 2008. Valencia, Spain
-
Dastgheib-Shirazi, A, Haverkamp, H, Raabe, B, Book, F, Hahn, G. Selective emitter for industrial solar cell production: a wet chemical approach using a single side diffusion process. In: Proceedings of the 23rd EU PVSEC; 1-5 September 2008. Valencia, Spain, pp. 1197-2.
-
Proceedings of the 23rd EU PVSEC
, pp. 1197-1202
-
-
Dastgheib-Shirazi, A.1
Haverkamp, H.2
Raabe, B.3
Book, F.4
Hahn, G.5
-
42
-
-
84889634732
-
The optimal choice of the doping levels in an inline selective emitter design for screen printed multicrystalline silicon solar cells
-
21-25 September 2009. Hamburg, Germany
-
Lauermann, T, Book, F, Dastgheib-Shirazi, A, Hahn, G, Haverkamp, H, Bleidiessel, R, et al. The optimal choice of the doping levels in an inline selective emitter design for screen printed multicrystalline silicon solar cells. In: 24th European photovoltaic solar energy conference; 21-25 September 2009. Hamburg, Germany, pp.1795-97.
-
24th European Photovoltaic Solar Energy Conference
, pp. 1795-1797
-
-
Lauermann, T.1
Book, F.2
Dastgheib-Shirazi, A.3
Hahn, G.4
Haverkamp, H.5
Bleidiessel, R.6
-
44
-
-
34548458496
-
2 for locally contacted Si solar cells with ultra-short pulses
-
DOI 10.1002/pip.758
-
2 for locally contacted Si solar cells with ultrashort pulses Prog Photovoltaics Res Appl 15 2007 521 527 (Pubitemid 47359501)
-
(2007)
Progress in Photovoltaics: Research and Applications
, vol.15
, Issue.6
, pp. 521-527
-
-
Engelhart, P.1
Hermann, S.2
Neubert, T.3
Plagwitz, H.4
Grischke, R.5
Meyer, R.6
Klug, U.7
Schoonderbeek, A.8
Stute, U.9
Brendel, R.10
-
45
-
-
70349656788
-
18.9% efficient full area laser doped silicon solar cell
-
S Eisele, T Röder, J Köhler, and J Werner 18.9% efficient full area laser doped silicon solar cell Appl Phys Lett 95 2009 133501 133503
-
(2009)
Appl Phys Lett
, vol.95
, pp. 133501-133503
-
-
Eisele, S.1
Röder, T.2
Köhler, J.3
Werner, J.4
-
46
-
-
78650112852
-
Laser doped selective emitters yield 0.5% efficiency gain
-
21-25 September 2009. Hamburg, Germany
-
Köhler, J, Grabitz, P, Eisele, S, Röder, T, Werner, J. Laser doped selective emitters yield 0.5% efficiency gain. In: Proceedings of the 24th European photovoltaic solar energy conference; 21-25 September 2009. Hamburg, Germany, pp. 1847-1850.
-
Proceedings of the 24th European Photovoltaic Solar Energy Conference
, pp. 1847-1850
-
-
Köhler, J.1
Grabitz, P.2
Eisele, S.3
Röder, T.4
Werner, J.5
-
47
-
-
78650130998
-
Industrial CP industrial emitter solar cells with plated contacts
-
20-25 June 2010. Honolulu, HI, USA
-
Kray, D, Bay, N, Cimiotti, G, Kleinschmidt, S,. Kösterke, Lösel, A, et al. Industrial CP industrial emitter solar cells with plated contacts. In: Preprint 35th IEEE PVSC; 20-25 June 2010. Honolulu, HI, USA.
-
Preprint 35th IEEE PVSC
-
-
Kray, D.1
Bay, N.2
Cimiotti, G.3
Kleinschmidt, S.4
Kösterke Lösel, A.5
-
48
-
-
84858416786
-
Wenham, Application of laser doped contact structure on multicrystalline solar cells
-
1-5 September 2008. Valencia, Spain
-
Tjahjono, B, Wang, S, Sugianto, A, Mai, L, Hameiri, N Borojevic, A et al. Wenham, Application of laser doped contact structure on multicrystalline solar cells. In: Proceedings of the 23rd European photovoltaic solar energy conference and exhibition; 1-5 September 2008. Valencia, Spain, pp. 1995-2000.
-
Proceedings of the 23rd European Photovoltaic Solar Energy Conference and Exhibition
, pp. 1995-2000
-
-
Tjahjono, B.1
Wang, S.2
Sugianto, A.3
Mai, L.4
Hameiri Borojevic, N.A.5
-
49
-
-
78650128899
-
All screen printed mass produced silicon ink selective emitter solar cells
-
Honolulu
-
Antoniadis, H, Jiang, F, Shan, W, Liu, Y. All screen printed mass produced silicon ink selective emitter solar cells. In: Proceedings of the 35th IEEE PVSC, Honolulu; 2010.
-
(2010)
Proceedings of the 35th IEEE PVSC
-
-
Antoniadis, H.1
Jiang, F.2
Shan, W.3
Liu, Y.4
-
50
-
-
78650101102
-
Crystalline silicon solar cells with selective emitter for industrial mass production
-
Hamburg
-
Esturo-Breton, A, Binaie, F, Breselge, M, Friess, T, Geiger, M, Holbig, E, et al. Crystalline silicon solar cells with selective emitter for industrial mass production In: Proceedings of the 24th EU PVSEC, Hamburg; 2009. 1068.
-
(2009)
Proceedings of the 24th EU PVSEC
, pp. 1068
-
-
Esturo-Breton, A.1
Binaie, F.2
Breselge, M.3
Friess, T.4
Geiger, M.5
Holbig, E.6
-
51
-
-
84860537698
-
Rear side passivated and locally contacted solar cells with laser diffused selective emitter
-
KA Münzer, J Schöne, A Teppe, M Hein, RE Schlosser, and M Hanke Rear side passivated and locally contacted solar cells with laser diffused selective emitter Energy Procedia 15 2012 1 9
-
(2012)
Energy Procedia
, vol.15
, pp. 1-9
-
-
Münzer, K.A.1
Schöne, J.2
Teppe, A.3
Hein, M.4
Schlosser, R.E.5
Hanke, M.6
-
52
-
-
84860504651
-
High-throughput ion-implantation for low-cost high-efficiency silicon solar cells
-
A Rohatgi, DL Meier, B McPherson, YW Ok, AD Upadhyaya, and JH Lai High-throughput ion-implantation for low-cost high-efficiency silicon solar cells Energy Procedia 15 2012 10 19
-
(2012)
Energy Procedia
, vol.15
, pp. 10-19
-
-
Rohatgi, A.1
Meier, D.L.2
McPherson, B.3
Ok, Y.W.4
Upadhyaya, A.D.5
Lai, J.H.6
-
53
-
-
84878037772
-
High throughput ion-implantation for silicon solar cells
-
H Hieslmair, L Mandrell, I Latchford, M Chun, J Sullivan, and B Adibi High throughput ion-implantation for silicon solar cells Energy Procedia 27 2012 122 128
-
(2012)
Energy Procedia
, vol.27
, pp. 122-128
-
-
Hieslmair, H.1
Mandrell, L.2
Latchford, I.3
Chun, M.4
Sullivan, J.5
Adibi, B.6
-
54
-
-
80052084723
-
High quality ion implanted boron emitters in an interdigiated back contact solar cell with 20% efficiency
-
N Bateman, P Sullivan, C Reichel, J Benick, and M Hermle High quality ion implanted boron emitters in an interdigiated back contact solar cell with 20% efficiency Energy Procedia 8 2011 509 514
-
(2011)
Energy Procedia
, vol.8
, pp. 509-514
-
-
Bateman, N.1
Sullivan, P.2
Reichel, C.3
Benick, J.4
Hermle, M.5
-
55
-
-
84861086755
-
High efficiency selective emitter enabled through patterned ion implantation
-
Honolulu
-
Low, R, Gupta, A, Bateman, N, Ramappa, D, Sullivan, P, Skinner, W, et al. High efficiency selective emitter enabled through patterned ion implantation. In: Proceedings of the 35th IEEE PVSC, Honolulu; 2010.
-
(2010)
Proceedings of the 35th IEEE PVSC
-
-
Low, R.1
Gupta, A.2
Bateman, N.3
Ramappa, D.4
Sullivan, P.5
Skinner, W.6
-
56
-
-
80052091908
-
High efficiency selective emitter cells using patterned ion implantation
-
CE Dubé, B Tsefrekas, D Buzby, R Tavares, W Zhang, and A Gupta High efficiency selective emitter cells using patterned ion implantation Energy Procedia 8 2011 706 711
-
(2011)
Energy Procedia
, vol.8
, pp. 706-711
-
-
Dubé, C.E.1
Tsefrekas, B.2
Buzby, D.3
Tavares, R.4
Zhang, W.5
Gupta, A.6
|