N -type emitter surface passivation in c-Si solar cells by means of antireflective amorphous silicon carbide layers

Journal of Applied Physics

Volumn 100, Issue 7, 2006, Pages

  Ferre, R ^a   Martin I ^a   Ortega, P ^a   Vetter, M ^a   Torres, I ^b   Alcubilla, R ^a  

^a UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

^b UNIVERSITAT ROVIRA I VIRGILI   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

PHOSPHORUS DIFFUSIONS; SOLAR CELL EMITTERS; SURFACE PASSIVATION;

CURRENT DENSITY; DEPOSITION; DIFFUSION; PHOTOCURRENTS; SILICON CARBIDE; SOLAR CELLS;

AMORPHOUS MATERIALS;

EID: 33749995746     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2354323     Document Type: Article

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