High efficiency selective emitter enabled through patterned ion implantation

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2011, Pages 001924-001928

  Low, Russell ^a   Gupta, Atul ^a   Gossmann, Hans Joachim ^a   Mullin, James ^a   Yelundur, Vijay ^b   Damiani, Ben ^b   Chandrasekaran, Vinodh ^b   Meier, Dan ^b   McPherson, Bruce ^b   Rohatgi, Ajeet ^b  

^a VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

^b Suniva   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

2D MODELING; AUTOMATED OPTICAL ALIGNMENT; CELL EFFICIENCY; DOPING TECHNIQUES; EDGE ISOLATION; EXPERIMENTAL DATA; FIDUCIAL MARK; GLASS LAYERS; HIGH QUALITY; HIGH-EFFICIENCY CELLS; IMPLANTATION TECHNOLOGY; IN-SITU; ION IMPLANTED; PROCESS FLOWS; PROCESSING STEPS; ROAD-MAPS; SELECTIVE EMITTERS; SURFACE PASSIVATION; THERMAL OXIDES; WET-ETCH;

ALIGNMENT; EFFICIENCY; PHOTOVOLTAIC EFFECTS; WET ETCHING;

ION IMPLANTATION;

EID: 84861086755     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6186328     Document Type: Conference Paper

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