Phosphorus-doped SiC as an excellent p -type Si surface passivation layer

Applied Physics Letters

Volumn 88, Issue 13, 2006, Pages

  Janz, S ^a   Riepe, S ^a   Hofmann, M ^a   Reber, S ^a   Glunz, S ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DEPOSITION; PASSIVATION; PHOSPHORUS; PLASMA ETCHING; SEMICONDUCTOR DOPING; SILICON WAFERS;

AMORPHOUS SILICON CARBIDE; DENSITY IMAGING TECHNIQUES; PASSIVATION LAYERS; PHOTOCONDUCTANCE;

SILICON CARBIDE;

EID: 33645517067     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2191954     Document Type: Article

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