Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys

Progress in Photovoltaics: Research and Applications

Volumn 16, Issue 2, 2008, Pages 123-127

  Ferre, R ^a   Orpella, A ^a   Munoz, D ^a   Martin I ^a   Recart, F ^b   Voz, C ^a   Puigdollers, J ^a   Roca i Cabarrocas, P ^c   Alcubilla, R ^a  

^a UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

^b UNIVERSITY OF THE BASQUE COUNTRY UPV EHU   (Spain)

^c LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

Amorphous silicon; Antireflective; Crystalline solar cells; Passivation; Phosphorus doped; Silicon carbide; Thermal stress

Indexed keywords

AMORPHOUS SILICON; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; SOLAR CELLS; THERMAL STRESS; THIN FILMS;

ANTIREFLECTIVE; CRYSTALLINE SOLAR CELLS; PHOSPHORUS DOPED;

SILICON ALLOYS;

EID: 41049113108     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.802     Document Type: Article

References (20)

1. Lauinger T, Schmidt J, Aberle AG, Hezel R. Record low surface recombination velocities on 1 Ω cm p-silicon using remote plasma silicon nitride passivation. Applied Physics Letters 1996; 68: 1232-1234.
2. x:H films. Applied Physics Letters 2001; 79: 2199-2201.
3. x:H films. Proceedings of the 17th European Photovoltaic Solar Energy Conference, Munich, Germany, 2001 (Mani Fotolito, Florence, 2002), 2954-2957.
4. Ferre R, Martín I, Vetter M, Garín M, Alcubilla R. Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface. Applied Physics Letters 2005; 87: 202109-202111.
5. Janz S, Riepe S, Hofmann M, Reber S, Glunz S. Phosphorus-doped SiC as an excellent p-type Si surface passivation layer. Applied Physics Letters 2006; 88: 133516-133517.
6. Ferre R, Martín I, Ortega P, Vetter M, Torres I, Alcubilla R. n-type emitter surface passivation in c-Si solar cells by means of antireflective amorphous silicon carbide layers. Journal of Applied Physics 2006; 100: 073703-073710.
7. Libal J, Petres R, Buck T, Kopecek R, Hahn G, Ferre R, Vetter M, Martín I, Wambach K, Roever I, Fath P. Proceedings of the 20th European Photovoltaic Solar Energy Conference Barcelona, Spain, 2005 (WIP-Renewable Energies 2005), 793-796.
8. y:H films. Applied Physics Letters 2002; 81: 4461-4463.
9. Martin I. Silicon surface passivation by plasma enhanced chemical vapor deposited amorphous silicon carbide films. PhD Thesis. Universität Politécnica de Catalunya (Barcelona 2004).
10. x:H films for c-Si surface passivation. Materials Research Society Symposium Proceedings 2002; 715: 539-542.
11. Jellison GE, Modine FA. Parameterization of the optical functions of amorphous materials in the interband region. Applied Physics Letters 1996; 69: 371-373.
12. Severens RJ, Brussaard GJH, van de Sauden MCM, Schram DC. Characterization of plasma beam deposited amorphous hydrogenated silicon. Applied Physics Letters 1995; 67: 491-493.
13. Fried M, Lohner T. Determination of complex dielectric functions of ion implanted and implanted-annealed amorphous silicon by spectroscopic ellipsometry. Journal of Applied Physics 1992; 71: 5260-5262.
14. Smets AHM, Schram DC, van de Sanden MCM. In situ single wavelength ellipsometry studies of high rate hydrogenated amorphous silicon growth using a remote expanding thermal plasma. Journal of Applied Physics 2000; 88: 6388-6394.
15. Sinton RA, Cuevas A. Contactless determination of current-voltage characteristics and minority-carrier life-times in semiconductors from quasi-steady-state photoconductance data. Applied Physics Letters 1996; 69: 2510-2512.
16. Kerr MJ, Cuevas A. General parameterization of Auger recombination in crystalline silicon. Journal of Applied Physics 2002; 91: 2473-2480.
17. Schaper M, Schmidt J, Plagwitz H, Brendel R. 20.1%-efficient crystalline silicon solar cell with amorphous silicon rear-surface passivation. Progress in Photovoltaics: Research and Applications 2005; 13: 381-386.
18. Glunz SW, Grohe A, Hofmann M, Janz S, Schultz O, Vetter M, Ferre R, Wolke W, Warta W, Preu R, Willeke G. Comparison of different dielectric passivation layers for application in industrial feasible silicon high-efficiency cells. Proceedings of the 20th European Photovoltaic Solar Energy Conference, Barcelona, 6-10 June 2005 (WIP-Renewable Energies), 572-577.
19. Dauwe S, Mittelstádt L, Metz A, Hezel R. Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells. Progress in Photovoltaics: Research and Applications 2002; 10: 271-278.
20. Abu El-Haija AJ. Effective medium approximation for the effective optical constants of a bilayer and a multilayer structure based on the characteristic matrix technique. Journal of Applied Physics 2003; 93: 2590-2594.