Defect generation at the Si-Si O2 interface following corona charging

Applied Physics Letters

Volumn 90, Issue 26, 2007, Pages

  Jin, Hao ^a   Weber, K J ^a   Dang, N C ^a   Jellett, W E ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEGRADATION; ELECTRIC FIELD EFFECTS; ELECTRIC VARIABLES MEASUREMENT; SILICA; SURFACE DEFECTS;

ATOMIC HYDROGEN; CAPACITANCE-VOLTAGE CHARACTERISTICS; CORONA CHARGING; DEFECT GENERATION;

INTERFACES (MATERIALS);

EID: 34547282814     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2749867     Document Type: Article

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