High quality ion implanted boron emitters in an interdigitated back contact solar cell with 20% efficiency

Energy Procedia

Volumn 8, Issue , 2011, Pages 509-514

  Bateman, Nicholas ^a   Sullivan, Paul ^a   Reichel, Christian ^b   Benick, Jan ^b   Hermle, Martin ^b  

^a VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

^b FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Ion implantation, interdigitated back contact cell; Silicon solar cell

Indexed keywords

DOPING (ADDITIVES); EFFICIENCY; IONS; SILICON; SILICON SOLAR CELLS; SOLAR CELLS;

ANNEALING CONDITION; IMPLANTED DOPANTS; INTERDIGITATED BACK CONTACT CELLS; INTERDIGITATED BACK CONTACTS; PHOSPHORUS-DOPED; PROCESS SIMPLIFICATION; SATURATION CURRENT DENSITIES; SINGLE ANNEALING;

ION IMPLANTATION;

EID: 80052084723     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.06.174     Document Type: Conference Paper

References (7)

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