High rate (∼7 nm/s), atmospheric pressure deposition of ZnO front electrode for Cu(In,Ga)Se2 thin-film solar cells with efficiency beyond 15%

Progress in Photovoltaics: Research and Applications

Volumn 21, Issue 8, 2013, Pages 1559-1566

  Illiberi, Andrea ^a   Grob, Frank ^a   Frijters, Corne ^a   Poodt, Paul ^a   Ramachandra, Ram ^a   Winands, Hans ^a   Simor, Marcel ^a   Bolt, Pieter Jan ^a  

^a TNO   (Netherlands)

Author keywords

atmospheric pressure; plasma enhanced chemical vapor deposition; solar cells; thin films; transparent conductive oxides; zinc oxide

Indexed keywords

AVERAGE EFFICIENCIES; GLASS SUBSTRATES; HIGH DEPOSITION RATES; LOW TEMPERATURES; NEAR ULTRAVIOLET; ROOM TEMPERATURE; THIN-FILM SOLAR CELLS; TRANSPARENT CONDUCTIVE OXIDES;

ALUMINUM; ALUMINUM COATINGS; ATMOSPHERIC PRESSURE; ATOMIC LAYER DEPOSITION; COPPER; DEPOSITION; EFFICIENCY; GALLIUM; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS; SUBSTRATES; THIN FILMS; VAPORS;

ZINC OXIDE;

EID: 84888638202     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2423     Document Type: Article

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