Evolution of the electrical and structural properties during the growth of Al doped ZnO films by remote plasma-enhanced metalorganic chemical vapor deposition

Journal of Applied Physics

Volumn 102, Issue 4, 2007, Pages

  Volintiru, I ^a   Creatore, M ^a   Kniknie, B J ^a   Spee, C I M A ^b   Van De Sanden, M C M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b TNO   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATOMIC FORCE MICROSCOPY; DOPING (ADDITIVES); FILM THICKNESS; MASS SPECTROMETRY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SHEET RESISTANCE; X RAY DIFFRACTION; ZINC OXIDE;

GROWTH PRECURSORS; PLASMA CHEMISTRY; POINT PROBES; TIME OF FLIGHT SECONDARY ION MASS SPECTROMETRY;

METALLIC FILMS;

EID: 34548460233     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2772569     Document Type: Article

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