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Volumn 13, Issue 5, 2010, Pages

The effects of UV exposure on plasma-enhanced atomic layer deposition ZnO thin film transistor

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; DEVICE PROPERTIES; GATE VOLTAGES; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; UV EXPOSURE; UV LIGHT; UV TREATMENT; ZNO FILMS; ZNO THIN FILM;

EID: 77949770418     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3322733     Document Type: Article
Times cited : (15)

References (24)
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    • S. J. Lim, S. Kwon, and H. Kim, Thin Solid Films 0040-6090, 516, 1523 (2008). 10.1016/j.tsf.2007.03.144
    • (2008) Thin Solid Films , vol.516 , pp. 1523
    • Lim, S.J.1    Kwon, S.2    Kim, H.3
  • 8
    • 35649020699 scopus 로고    scopus 로고
    • High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO
    • DOI 10.1063/1.2803219
    • S. J. Lim, S. -J. Kwon, J. -S. Park, and H. Kim, Appl. Phys. Lett. 0003-6951, 91, 183517 (2007). 10.1063/1.2803219 (Pubitemid 350037253)
    • (2007) Applied Physics Letters , vol.91 , Issue.18 , pp. 183517
    • Lim, S.J.1    Kwon, S.-J.2    Kim, H.3    Park, J.-S.4
  • 14
    • 0028320308 scopus 로고
    • 0040-6090, 10.1016/0040-6090(94)90655-6
    • D. H. Zhang and D. E. Brodie, Thin Solid Films 0040-6090, 238, 95 (1994). 10.1016/0040-6090(94)90655-6
    • (1994) Thin Solid Films , vol.238 , pp. 95
    • Zhang, D.H.1    Brodie, D.E.2
  • 15
    • 0342692238 scopus 로고
    • 0096-8250, 10.1103/PhysRev.112.388
    • R. J. Collins and D. G. Thomas, Phys. Rev. 0096-8250, 112, 388 (1958). 10.1103/PhysRev.112.388
    • (1958) Phys. Rev. , vol.112 , pp. 388
    • Collins, R.J.1    Thomas, D.G.2
  • 23
    • 0000485992 scopus 로고
    • 0022-3727, 10.1088/0022-3727/28/6/034
    • D. H. Zhang, J. Phys. D 0022-3727, 28, 1273 (1995). 10.1088/0022-3727/28/ 6/034
    • (1995) J. Phys. D , vol.28 , pp. 1273
    • Zhang, D.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.