Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-up

Solid-State Electronics

Volumn 90, Issue , 2013, Pages 99-106

  Hraziia, ^a   Makosiej, Adam ^a   Palma, Giorgio ^b   Portal, Jean Michel ^c   Bocquet, Marc ^c   Thomas, Olivier ^b   Clermidy, Fabien ^b   Reyboz, Marina ^b   Onkaraiah, Santhosh ^b   Muller, Christophe ^c   Deleruyelle, Damien ^c   Vladimirescu, Andrei ^a   Amara, Amara ^a   Anghel, Costin ^a  

^a ISEP Institut Supérieur d Électronique de Paris   (France)

^b CEA GRENOBLE   (France)

^c AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

FDSOI; Low leakage; Low power; Non Volatile; NV SRAM; Resistive RAMs

Indexed keywords

FDSOI; LOW LEAKAGE; LOW POWER; NON-VOLATILE; NV-SRAM; RESISTIVE RAMS;

HAFNIUM OXIDES;

STATIC RANDOM ACCESS STORAGE;

EID: 84887449625     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2013.02.045     Document Type: Article

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