A low store energy, low VDDmin, nonvolatile 8T2R SRAM with 3D stacked RRAM devices for low power mobile applications

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2010, Pages 229-230

  Chiu, Pi Feng ^a   Chang, Meng Fan ^a   Sheu, Shyh Shyuan ^b,c   Lin, Ku Feng ^a   Chiang, Pei Chia ^b   Wu, Che Wei ^a   Lin, Wen Pin ^b   Lin, Chih He ^b   Hsu, Ching Chih ^b   Chen, Frederick T ^b   Su, Keng Li ^b   Kao, Ming Jer ^b   Tsai, Ming Jinn ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

6T-CELL; ASSIST FEATURES; LOW POWER; MOBILE APPLICATIONS; NON-VOLATILE; READ/WRITE OPERATIONS; TRANSISTOR SIZING;

NONVOLATILE STORAGE; STATIC RANDOM ACCESS STORAGE; THREE DIMENSIONAL;

VLSI CIRCUITS;

EID: 77957980630     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIC.2010.5560286     Document Type: Conference Paper

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