Nonvolatile SRAM (NV-SRAM) using functional MOSFET merged with resistive switching devices

Proceedings of the Custom Integrated Circuits Conference

Volumn , Issue , 2009, Pages 531-534

  Yamamoto, Shuu'ichirou ^a,b   Shuto, Yusuke ^a,b   Sugahara, Satoshi ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT OPERATION; CURRENT DRIVES; MOS-FET; MOSFETS; NON-POLAR; NON-VOLATILE; RECONFIGURABLE LOGIC; RESISTANCE STATE; RESISTIVE SWITCHING; SOURCE TERMINAL; SPICE MACRO-MODEL; SRAM CELL;

INTEGRATED CIRCUITS; SPICE; STATIC RANDOM ACCESS STORAGE; SWITCHING SYSTEMS;

MOSFET DEVICES;

EID: 74049128293     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CICC.2009.5280761     Document Type: Conference Paper

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