Thermal effects and instability in unipolar resistive switching devices

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2011, Pages 167-168

  Chen, An ^a   Lin, Ming Ren ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL EVIDENCE; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; NON-VOLATILE MEMORY APPLICATION; OPERATION CONDITIONS; RESISTIVE SWITCHING DEVICES; RESISTIVE SWITCHING MECHANISMS; SWITCHING CHARACTERISTICS;

SWITCHING;

SWITCHING SYSTEMS;

EID: 84880717767     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2011.5994473     Document Type: Conference Paper

References (5)

1. MJ. Rozenberg et al. Phys. Rev. B 81 115101 2010
2. A. Chen et al., IEDM Tech. Dig., p. 765 (2005);
3. T. Fang et al., IEDM Tech. Dig., p. 789 (2006);
4. D. Ielmini, IEEE Electron. Dev. Lett. 31, 552 (2010);
5. O.K. Kim, et al., IEEE Electron. Dev. Lett. 31, 600 (2010).