Solvent-mediated threshold voltage shift in solution-processed transparent oxide thin-film transistors

Applied Physics Letters

Volumn 97, Issue 9, 2010, Pages

  Kim, Yong Hoon ^a   Kim, Hyun Soo ^a   Han, Jeong In ^b   Park, Sung Kyu ^c  

^a Korea Electronic Technology Institute (KETI)   (South Korea)

^b Dongguk University   (South Korea)

^c Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BACK CHANNELS; DIELECTRIC CONSTANTS; DIPOLE INTERACTION; ISO-PROPANOLS; SOLUTION-PROCESSED; SOLVENT MOLECULES; THRESHOLD VOLTAGE SHIFTS; TRANSPARENT OXIDES;

CHEMICAL BONDS; ELECTRONEGATIVITY; HEXANE; ORGANIC SOLVENTS; THRESHOLD VOLTAGE; TIN; TIN OXIDES; TITANIUM COMPOUNDS; ZINC;

THIN FILM TRANSISTORS;

EID: 77956364501     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3485056     Document Type: Article

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