Improved negative bias illumination instability of sol-gel gallium zinc tin oxide thin film transistors

Applied Physics Letters

Volumn 99, Issue 15, 2011, Pages

  Seo, Seok Jun ^a   Hyuck Jeon, Jun ^a   Hwan Hwang, Young ^a   Bae, Byeong Soo ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GA DOPING; GA-DOPED; NEGATIVE BIAS; PASSIVATION LAYER; TIME EVOLUTIONS; WAVELENGTH DEPENDENCE; ZINC TIN OXIDE;

GELS; HYBRID MATERIALS; OXYGEN; OXYGEN VACANCIES; PASSIVATION; SEMICONDUCTOR DOPING; SOL-GEL PROCESS; SOL-GELS; SOLS; STABILITY; STRESS ANALYSIS; THIN FILM DEVICES; THIN FILMS; TIN; TIN OXIDES; TRANSISTORS; ZINC;

THIN FILM TRANSISTORS;

EID: 80055006024     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3646388     Document Type: Article

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