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Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 3, 2010, Pages 695-699

Metastability in multicomponent oxide transistors

(7) Jackson, Warren B a Hoffman, Randy b Yeh, Bao b Emery, Tim b Koch, Tim b McConica, C b Kwon, Ohseung a

a HEWLETT PACKARD LABORATORIES (United States)

b HEWLETT PACKARD COMPANY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS STRESS; DEFECT GENERATION; DISORDER ENERGY; GATE VOLTAGES; ILLUMINATION CONDITIONS; METASTABILITIES; MULTI-COMPONENT OXIDES; MULTICOMPONENTS; NEGATIVE GATE; PASSIVATION LAYER; POSITIVE GATE BIAS; POWER-LAW DEPENDENCES; STRETCHED EXPONENTIAL;

ACTIVATION ENERGY; GATES (TRANSISTOR); OXYGEN; OXYGEN VACANCIES; PASSIVATION; SURFACE DEFECTS; TIN; TIN OXIDES; TITANIUM COMPOUNDS; TRANSISTORS; ZINC;

GATE DIELECTRICS;

EID: 77950990243 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200982894 Document Type: Article

Times cited : (7)

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